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  Growth and oxidization stability of cubic Zr1-xGdxN solid solution thin films

Höglund, C., Alling, B., Jensen, J. M., Hultman, L., Birch, J., & Hall-Wilton, R. J. (2015). Growth and oxidization stability of cubic Zr1-xGdxN solid solution thin films. Journal of Applied Physics, 117(19): 195301. doi:10.1063/1.4921167.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-002A-584E-A Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002A-584F-8
Genre: Journal Article

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 Creators:
Höglund, Carina1, 2, Author              
Alling, Björn1, 3, Author              
Jensen, Jens M.1, Author              
Hultman, Lars1, Author              
Birch, Jens1, Author              
Hall-Wilton, Richard John2, 4, Author              
Affiliations:
1Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linköping University, Linköping, Sweden, ou_persistent22              
2European Spallation Source ESS AB, P.O. Box 176, Lund, Sweden, ou_persistent22              
3Adaptive Structural Materials (Simulation), Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863339              
4Mid-Sweden University, Sundsvall, Sweden, ou_persistent22              

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Free keywords: Air shows; Capping layer; Compositional range; Crystalline quality; First-principles calculation; Oxidization; Solid solubilities; Substrate temperature
 Abstract: We report Zr1-xGdxN thin films deposited by magnetron sputter deposition. We show a solid solubility of the highly neutron absorbing GdN into ZrN along the whole compositional range, which is in excellent agreement with our recent predictions by first-principles calculations. An oxidization study in air shows that Zr1-xGdxN with x reaching from 1 to close to 0 fully oxidizes, but that the oxidization is slowed down by an increased amount of ZrN or stopped by applying a capping layer of ZrN. The crystalline quality of Zr0.5Gd0.5N films increases with substrate temperatures increasing from 100 degrees C to 900 degrees C. (C) 2015 Author(s).

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Language(s): eng - English
 Dates: 2015-05-21
 Publication Status: Published in print
 Pages: 6
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: ISI: 000355005600031
DOI: 10.1063/1.4921167
 Degree: -

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Title: Journal of Applied Physics
  Abbreviation : J. Appl. Phys.
Source Genre: Journal
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Publ. Info: New York, NY : AIP Publishing
Pages: - Volume / Issue: 117 (19) Sequence Number: 195301 Start / End Page: - Identifier: ISSN: 0021-8979
CoNE: /journals/resource/991042723401880