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  Growth and oxidization stability of cubic Zr1-xGdxN solid solution thin films

Höglund, C., Alling, B., Jensen, J. M., Hultman, L., Birch, J., & Hall-Wilton, R. J. (2015). Growth and oxidization stability of cubic Zr1-xGdxN solid solution thin films. Journal of Applied Physics, 117(19): 195301. doi:10.1063/1.4921167.

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 Urheber:
Höglund, Carina1, 2, Autor           
Alling, Björn1, 3, Autor           
Jensen, Jens M.1, Autor           
Hultman, Lars1, Autor           
Birch, Jens1, Autor           
Hall-Wilton, Richard John2, 4, Autor           
Affiliations:
1Department of Physics, Chemistry and Biology (IFM), Thin Film Physics Division, Linköping University, Linköping, Sweden, ou_persistent22              
2European Spallation Source ESS AB, P.O. Box 176, Lund, Sweden, ou_persistent22              
3Adaptive Structural Materials (Simulation), Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863339              
4Mid-Sweden University, Sundsvall, Sweden, ou_persistent22              

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Schlagwörter: Air shows; Capping layer; Compositional range; Crystalline quality; First-principles calculation; Oxidization; Solid solubilities; Substrate temperature
 Zusammenfassung: We report Zr1-xGdxN thin films deposited by magnetron sputter deposition. We show a solid solubility of the highly neutron absorbing GdN into ZrN along the whole compositional range, which is in excellent agreement with our recent predictions by first-principles calculations. An oxidization study in air shows that Zr1-xGdxN with x reaching from 1 to close to 0 fully oxidizes, but that the oxidization is slowed down by an increased amount of ZrN or stopped by applying a capping layer of ZrN. The crystalline quality of Zr0.5Gd0.5N films increases with substrate temperatures increasing from 100 degrees C to 900 degrees C. (C) 2015 Author(s).

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Sprache(n): eng - English
 Datum: 2015-05-21
 Publikationsstatus: Erschienen
 Seiten: 6
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: ISI: 000355005600031
DOI: 10.1063/1.4921167
 Art des Abschluß: -

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Titel: Journal of Applied Physics
  Kurztitel : J. Appl. Phys.
Genre der Quelle: Zeitschrift
 Urheber:
Affiliations:
Ort, Verlag, Ausgabe: New York, NY : AIP Publishing
Seiten: - Band / Heft: 117 (19) Artikelnummer: 195301 Start- / Endseite: - Identifikator: ISSN: 0021-8979
CoNE: https://pure.mpg.de/cone/journals/resource/991042723401880