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  Retention of intermediate polarization states in ferroelectric materials enabling memories for multi-bit data storage

Zhao, D., Katsouras, I., Asadi, K., Groen, W. A., Blom, P. W. M., & de Leeuw, D. M. (2016). Retention of intermediate polarization states in ferroelectric materials enabling memories for multi-bit data storage. Applied Physics Letters, 108(23): 232907. doi:10.1063/1.4953199.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-002B-21E6-4 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002B-21E7-2
Genre: Journal Article

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 Creators:
Zhao, Dong1, Author              
Katsouras, Ilias2, Author              
Asadi, Kamal3, Author              
Groen, W. A., Author
Blom, Paul W. M.1, Author              
de Leeuw, Dago M.1, Author              
Affiliations:
1Dept. Blom: Molecular Electronics, MPI for Polymer Research, Max Planck Society, ou_1800284              
2Holst Ctr, High Tech Campus 31, NL-5656 AE Eindhoven, Netherlands, ou_persistent22              
3Humboldt Research Group Asadi: Organic/Inorganic Hybrids, MPI for Polymer Research, Max Planck Society, ou_2243638              

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Language(s): eng - English
 Dates: 2016
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1063/1.4953199
 Degree: -

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Title: Applied Physics Letters
  Abbreviation : Appl. Phys. Lett.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Melville, NY : American Institute of Physics
Pages: - Volume / Issue: 108 (23) Sequence Number: 232907 Start / End Page: - Identifier: Other: 0003-6951
CoNE: https://pure.mpg.de/cone/journals/resource/954922836223