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  Role of Sub-Nanometer Dielectric Roughness on Microstructure and Charge Carrier Transport in alpha,omega-Dihexylsexithiophene Field-Effect Transistors

Li, M., Marszalek, T., Müllen, K., & Pisula, W. (2016). Role of Sub-Nanometer Dielectric Roughness on Microstructure and Charge Carrier Transport in alpha,omega-Dihexylsexithiophene Field-Effect Transistors. ACS Applied Materials and Interfaces, 8(25), 16200-16206. doi:10.1021/acsami.6b03233.

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 Creators:
Li, Mengmeng1, Author           
Marszalek, Tomasz1, Author           
Müllen, Klaus1, Author           
Pisula, Wojciech1, Author           
Affiliations:
1Dept. Müllen: Synthetic Chemistry, MPI for Polymer Research, Max Planck Society, ou_1800289              

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Language(s): eng - English
 Dates: 2016
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1021/acsami.6b03233
 Degree: -

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Title: ACS Applied Materials and Interfaces
  Abbreviation : ACS Appl. Mater. Interfaces
Source Genre: Journal
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Publ. Info: Washington, DC : American Chemical Society
Pages: - Volume / Issue: 8 (25) Sequence Number: - Start / End Page: 16200 - 16206 Identifier: ISSN: 1944-8244
CoNE: https://pure.mpg.de/cone/journals/resource/1944-8244