ausblenden:
Schlagwörter:
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MPIPKS:
Electronic structure
Zusammenfassung:
A novel interaction mechanism in metal-oxide-semiconduction field-effect transistor (MOSFET) structures and GaAs/AlGaAs heterojunctions between the zone electrons of a two-dimensional (2D) gas and charged traps on the insulator side is considered. By applying a canonical transformation, off-diagonal terms in the Hamiltonian due to the trapped level subsystem are excluded. This yields an effective three-particle attractive interaction as well as a pairing interaction inside the 2D electronic band. A type of Bethe-Goldstone equation for three particles is studied to clarify the character of the binding and the energy of the three-particle bound states. The results are used to offer a possible explanation of the metal-insulator transition recently observed in MOSFET and heterojunctions.
