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  A Large-Area Transferable Wide Band Gap 2D Silicon Dioxide Layer

Büchner, C., Wang, Z.-J., Burson, K., Willinger, M. G., Heyde, M., Schlögl, R., et al. (2016). A Large-Area Transferable Wide Band Gap 2D Silicon Dioxide Layer. ACS Nano, 10(8), 7982-7989. doi:10.1021/acsnano.6b03929.

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2016
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 Creators:
Büchner, Christin1, Author           
Wang, Zhu-Jun2, Author           
Burson, Kristen1, Author           
Willinger, Marc Georg2, Author           
Heyde, Markus1, Author           
Schlögl, Robert2, Author           
Freund, Hans-Joachim1, Author           
Affiliations:
1Chemical Physics, Fritz Haber Institute, Max Planck Society, ou_24022              
2Inorganic Chemistry, Fritz Haber Institute, Max Planck Society, ou_24023              

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 Abstract: An atomically smooth silica bilayer is transferred from the growth substrate to a new support via mechanical exfoliation at millimeter scale. The atomic structure and morphology are maintained perfectly throughout the process. A simple heating treatment results in complete removal of the transfer medium. Low-energy electron diffraction, Auger electron spectroscopy, scanning tunneling microscopy, and environmental scanning electron microscopy show the success of the transfer steps. Excellent chemical and thermal stability result from the absence of dangling bonds in the film structure. By adding this wide band gap oxide to the toolbox of 2D materials, possibilities for van der Waals heterostructures will be broadened significantly.

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 Dates: 2016-06-142016-07-152016-07-152016-08-23
 Publication Status: Issued
 Pages: 8
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1021/acsnano.6b03929
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Title: ACS Nano
Source Genre: Journal
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Publ. Info: Washington, DC : American Chemical Society
Pages: 8 Volume / Issue: 10 (8) Sequence Number: - Start / End Page: 7982 - 7989 Identifier: Other: 1936-0851
CoNE: https://pure.mpg.de/cone/journals/resource/1936-0851