English
 
User Manual Privacy Policy Disclaimer Contact us
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
  Optical Stark effect in 2D semiconductors

Sie, E. J., McIver, J. W., Lee, Y.-H., Fu, L., Kong, J., & Gedik, N. (2016). Optical Stark effect in 2D semiconductors. Proceedings of SPIE, 9835: 983518. doi:10.1117/12.2223462.

Item is

Basic

show hide
Item Permalink: http://hdl.handle.net/11858/00-001M-0000-002B-502D-1 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002B-502E-0
Genre: Conference Paper

Files

show Files

Locators

show
hide
Locator:
http://dx.doi.org/10.1117/12.2223462 (Publisher version)
Description:
-

Creators

show
hide
 Creators:
Sie, Edbert J.1, Author
McIver, James W.2, Author              
Lee, Yi-Hsien3, Author
Fu, Liang1, Author
Kong, Jing1, Author
Gedik, Nuh1, Author
Affiliations:
1Massachusetts Institute of Technology (United States), ou_persistent22              
2Quantum Condensed Matter Dynamics, Condensed Matter Dynamics Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_1938293              
3National Tsing Hua Univ. (Taiwan), ou_persistent22              

Content

show
hide
Free keywords: Optical Stark effect; transition metal dichalcogenide; transient absorption; valleytronics; Floquet; WS2; monolayer; valley
 Abstract: Semiconductors that are atomically thin can exhibit novel optical properties beyond those encountered in the bulk compounds. Monolayer transition-metal dichalcogenides (TMDs) are leading examples of such semiconductors that possess remarkable optical properties. They obey unique selection rules where light with different circular polarization can be used for selective photoexcitation at two different valleys in the momentum space. These valleys constitute bandgaps that are normally locked in the same energy. Selectively varying their energies is of great interest for applications because it unlocks the potential to control valley degree of freedom, and offers a new promising way to carry information in next-generation valleytronics. In this proceeding paper, we show that the energy gaps at the two valleys can be shifted relative to each other by means of the optical Stark effect in a controllable valley-selective manner. We discuss the physics of the optical Stark effect, and we describe the mechanism that leads to its valleyselectivity in monolayer TMD tungsten disulfide (WS2).

Details

show
hide
Language(s): eng - English
 Dates: 2016-05-13
 Publication Status: Published online
 Pages: 9
 Publishing info: -
 Table of Contents: -
 Rev. Method: Internal
 Identifiers: DOI: 10.1117/12.2223462
 Degree: -

Event

show
hide
Title: Ultrafast Bandgap Photonics
Place of Event: Baltimore, Maryland, USA
Start-/End Date: 2016-04-18 - 2016-04-20

Legal Case

show

Project information

show

Source 1

show
hide
Title: Proceedings of SPIE
  Subtitle : Ultrafast Bandgap Photonics
Source Genre: Journal
 Creator(s):
Rafailov, Michael K.1, Editor
Mazur, Eric2, Editor
Affiliations:
1 University of Alberta (Canada), ou_persistent22            
2 Harvard University (United States), ou_persistent22            
Publ. Info: Bellingham, Washington : SPIE
Pages: - Volume / Issue: 9835 Sequence Number: 983518 Start / End Page: - Identifier: ISSN: 0277-786X
CoNE: /journals/resource/0277-786X