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  Optical Stark effect in 2D semiconductors

Sie, E. J., McIver, J. W., Lee, Y.-H., Fu, L., Kong, J., & Gedik, N. (2016). Optical Stark effect in 2D semiconductors. Proceedings of SPIE, 9835: 983518. doi:10.1117/12.2223462.

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Datensatz-Permalink: https://hdl.handle.net/11858/00-001M-0000-002B-502D-1 Versions-Permalink: https://hdl.handle.net/11858/00-001M-0000-002B-502E-0
Genre: Konferenzbeitrag

Externe Referenzen

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externe Referenz:
http://dx.doi.org/10.1117/12.2223462 (Verlagsversion)
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Urheber

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 Urheber:
Sie, Edbert J.1, Autor
McIver, James W.2, Autor           
Lee, Yi-Hsien3, Autor
Fu, Liang1, Autor
Kong, Jing1, Autor
Gedik, Nuh1, Autor
Affiliations:
1Massachusetts Institute of Technology (United States), ou_persistent22              
2Quantum Condensed Matter Dynamics, Condensed Matter Dynamics Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_1938293              
3National Tsing Hua Univ. (Taiwan), ou_persistent22              

Inhalt

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Schlagwörter: Optical Stark effect; transition metal dichalcogenide; transient absorption; valleytronics; Floquet; WS2; monolayer; valley
 Zusammenfassung: Semiconductors that are atomically thin can exhibit novel optical properties beyond those encountered in the bulk compounds. Monolayer transition-metal dichalcogenides (TMDs) are leading examples of such semiconductors that possess remarkable optical properties. They obey unique selection rules where light with different circular polarization can be used for selective photoexcitation at two different valleys in the momentum space. These valleys constitute bandgaps that are normally locked in the same energy. Selectively varying their energies is of great interest for applications because it unlocks the potential to control valley degree of freedom, and offers a new promising way to carry information in next-generation valleytronics. In this proceeding paper, we show that the energy gaps at the two valleys can be shifted relative to each other by means of the optical Stark effect in a controllable valley-selective manner. We discuss the physics of the optical Stark effect, and we describe the mechanism that leads to its valleyselectivity in monolayer TMD tungsten disulfide (WS2).

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Sprache(n): eng - English
 Datum: 2016-05-13
 Publikationsstatus: Online veröffentlicht
 Seiten: 9
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: Interne Begutachtung
 Identifikatoren: DOI: 10.1117/12.2223462
 Art des Abschluß: -

Veranstaltung

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Titel: Ultrafast Bandgap Photonics
Veranstaltungsort: Baltimore, Maryland, USA
Start-/Enddatum: 2016-04-18 - 2016-04-20

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Projektinformation

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Quelle 1

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Titel: Proceedings of SPIE
  Untertitel : Ultrafast Bandgap Photonics
Genre der Quelle: Zeitschrift
 Urheber:
Rafailov, Michael K.1, Herausgeber
Mazur, Eric2, Herausgeber
Affiliations:
1 University of Alberta (Canada), ou_persistent22            
2 Harvard University (United States), ou_persistent22            
Ort, Verlag, Ausgabe: Bellingham, Washington : SPIE
Seiten: - Band / Heft: 9835 Artikelnummer: 983518 Start- / Endseite: - Identifikator: ISSN: 0277-786X
CoNE: https://pure.mpg.de/cone/journals/resource/0277-786X