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  Atomic and electronic structure of trilayer graphene/SiC(0001): Evidence of Strong Dependence on Stacking Sequence and charge transfer

Pierucci, D., Brumme, T., Girard, J.-C., Calandra, M., Silly, M. G., Sirotti, F., et al. (2016). Atomic and electronic structure of trilayer graphene/SiC(0001): Evidence of Strong Dependence on Stacking Sequence and charge transfer. Scientific Reports, 6: 33487. doi:10.1038/srep33487.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-002B-8406-B Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002B-8407-9
Genre: Journal Article

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© D. Pierucci et al.

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http://dx.doi.org/10.1038/srep33487 (Publisher version)
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 Creators:
Pierucci, Debora1, Author
Brumme, Thomas2, 3, Author              
Girard, Jean-Christophe1, Author
Calandra, Matteo2, Author
Silly, Mathieu G.4, Author
Sirotti, Fausto4, Author
Barbier, Antoine5, Author
Mauri, Francesco6, 7, Author
Ouerghi, Abdelkarim1, Author
Affiliations:
1Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N–Marcoussis, 91460 Marcoussis, France, ou_persistent22              
2Institut de Minéralogie, de Physique des Matériaux, et de Cosmochimie, UMR CNRS 7590, Sorbonne Universités, UPMC, Univ. Paris VI, MNHN, IRD, 4 Place Jussieu, 75005 Paris, France, ou_persistent22              
3Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_2266715              
4Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France, ou_persistent22              
5Service de Physique de l’Etat Condensé, DSM/IRAMIS/SPEC, CEA-CNRS UMR 3680, CEA-Saclay, F-91191 Gif-sur-Yvette, France, ou_persistent22              
6Departimento di Fisica, Università di Roma La Sapienza, Piazzale Aldo Moro 5, I-00185 Roma, Italy, ou_persistent22              
7Graphene Labs, Fondazione Istituto Italiano di Tecnologia, Via Morego, I-16163 Genova, Italy, ou_persistent22              

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Free keywords: Electronic properties and devices; Electronic properties and materials
 Abstract: The transport properties of few-layer graphene are the directly result of a peculiar band structure near the Dirac point. Here, for epitaxial graphene grown on SiC, we determine the effect of charge transfer from the SiC substrate on the local density of states (LDOS) of trilayer graphene using scaning tunneling microscopy/spectroscopy and angle resolved photoemission spectroscopy (ARPES). Different spectra are observed and are attributed to the existence of two stable polytypes of trilayer: Bernal (ABA) and rhomboedreal (ABC) staking. Their electronic properties strongly depend on the charge transfer from the substrate. We show that the LDOS of ABC stacking shows an additional peak located above the Dirac point in comparison with the LDOS of ABA stacking. The observed LDOS features, reflecting the underlying symmetry of the two polytypes, were reproduced by explicit calculations within density functional theory (DFT) including the charge transfer from the substrate. These findings demonstrate the pronounced effect of stacking order and charge transfer on the electronic structure of trilayer or few layer graphene. Our approach represents a significant step toward understand the electronic properties of graphene layer under electrical field.

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Language(s): eng - English
 Dates: 2016-04-072016-08-242016-09-15
 Publication Status: Published online
 Pages: 9
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1038/srep33487
 Degree: -

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Title: Scientific Reports
  Abbreviation : Sci. Rep.
Source Genre: Journal
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Publ. Info: London, UK : Nature Publishing Group
Pages: - Volume / Issue: 6 Sequence Number: 33487 Start / End Page: - Identifier: ISSN: 2045-2322
CoNE: https://pure.mpg.de/cone/journals/resource/2045-2322