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  Impact of annealing on electrical properties of Cu2ZnSnSe4 absorber layers

Weiss, T. P., Redinger, A., Rey, G., Schwarz, T., Spies, M., Cojocaru-Mirédin, O., et al. (2016). Impact of annealing on electrical properties of Cu2ZnSnSe4 absorber layers. Journal of Applied Physics, 120: 045703. doi:10.1063/1.4959611.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-002B-B7CD-9 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002B-B7CE-7
Genre: Journal Article

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 Creators:
Weiss, Thomas Paul1, 2, Author              
Redinger, Alex2, 3, Author              
Rey, Germain2, Author              
Schwarz, Torsten4, 5, Author              
Spies, Maria5, 6, Author              
Cojocaru-Mirédin, Oana4, 5, Author              
Choi, Pyuck-Pa5, 7, Author              
Siebentritt, Susanne2, Author              
Affiliations:
1Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, 8600 Dübendorf, Switzerland, ou_persistent22              
2University of Luxembourg, Laboratory for Photovoltaics, 41, rue du Brill, L-4422, Belvaux, Luxembourg, ou_persistent22              
3Helmholtz Zentrum Berlin, Department Complex Compound Semiconductor Materials for Photovoltaics, Hahn-Meitner-Platz 1, D-14109 Berlin, Germany, ou_persistent22              
4 I. Physikalisches Institut IA, RWTH Aachen University, 52056 Aachen, Germany, ou_persistent22              
5Atom Probe Tomography, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863384              
6Groupe de Physique des Matriaux, Université et INSA de Rouen, Normandie University, Rouen, France, ou_persistent22              
7Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea, ou_persistent22              

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Language(s): eng - English
 Dates: 2016
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: DOI: 10.1063/1.4959611
 Degree: -

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Title: Journal of Applied Physics
  Abbreviation : J. Appl. Phys.
Source Genre: Journal
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Publ. Info: New York, NY : AIP Publishing
Pages: 8 Volume / Issue: 120 Sequence Number: 045703 Start / End Page: - Identifier: ISSN: 0021-8979
CoNE: https://pure.mpg.de/cone/journals/resource/991042723401880