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  Unveiling the Hybrid n-Si/PEDOT:PSS Interface

Jaeckle, S., Liebhaber, M., Niederhausen, J., Buechele, M., Felix, R., Wilks, R. G., et al. (2016). Unveiling the Hybrid n-Si/PEDOT:PSS Interface. ACS APPLIED MATERIALS & INTERFACES, 8(13), 8841-8848. doi:10.1021/acsami.6b01596.

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Jaeckle, Sara1, Autor           
Liebhaber, Martin2, Autor
Niederhausen, Jens2, Autor
Buechele, Matthias2, Autor
Felix, Roberto2, Autor
Wilks, Regan G.2, Autor
Baer, Marcus2, Autor
Lips, Klaus2, Autor
Christiansen, Silke1, 3, Autor           
Affiliations:
1Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364716              
2external, ou_persistent22              
3Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364725              

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Schlagwörter: HETEROJUNCTION SOLAR-CELLS; PHOTOELECTRON-SPECTROSCOPY; PHOTOVOLTAIC DEVICES; PASSIVATION LAYER; SILICON; AIR; FILM; IMPROVEMENT; TRANSPORT; PSSScience & Technology - Other Topics; Materials Science; solar cells; hybrid materials; conducting polymers; interface; hard X-ray photoelectron spectroscopy; inorganic/organic; device stability;
 Zusammenfassung: We investigated the buried interface between monocrystalline n-type silicon (n-Si) and the highly conductive polymer poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS), which is successfully applied as a hole selective contact in hybrid solar cells. We show that a post-treatment of the polymer films by immersion in a suitable solvent reduces the layer thickness by removal of excess material. We prove that this post-treatment does not affect the functionality of the hybrid solar cells. Through the thin layer we are probing the chemical structure at the n-Si/PEDOT:PSS interface with synchrotron-based hard X-ray photoelectron spectroscopy (HAXPES). From the HAXPES data we conclude that the Si substrate of a freshly prepared hybrid solar cell is already oxidized immediately after preparation. Moreover, we show that even when storing the sample in inert gas such as, e.g., nitrogen the n-Si/SiOx/PEDOT:PSS interface continues to further oxidize. Thus, without further surface treatment, an unstable Si suboxide will always be present at the hybrid interface.

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Sprache(n): eng - English
 Datum: 2016
 Publikationsstatus: Erschienen
 Seiten: 8
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: ISI: 000373748200062
DOI: 10.1021/acsami.6b01596
 Art des Abschluß: -

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Titel: ACS APPLIED MATERIALS & INTERFACES
Genre der Quelle: Zeitschrift
 Urheber:
Affiliations:
Ort, Verlag, Ausgabe: 1155 16TH ST, NW, WASHINGTON, DC 20036 USA : AMER CHEMICAL SOC
Seiten: - Band / Heft: 8 (13) Artikelnummer: - Start- / Endseite: 8841 - 8848 Identifikator: ISSN: 1944-8244