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  Extended hot carrier lifetimes observed in bulk In0.265 +/- 0.02Ga0.735N under high-density photoexcitation

Zhang, Y., Tayebjee, M. J. Y., Smyth, S., Dvorak, M., Xiaoming, W., Hongze, X., et al. (2016). Extended hot carrier lifetimes observed in bulk In0.265 +/- 0.02Ga0.735N under high-density photoexcitation. APPLIED PHYSICS LETTERS, 108(13): 131904. doi:10.1063/1.4945594.

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Datensatz-Permalink: https://hdl.handle.net/11858/00-001M-0000-002D-62F3-6 Versions-Permalink: https://hdl.handle.net/11858/00-001M-0000-002D-62F4-4
Genre: Zeitschriftenartikel

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 Urheber:
Zhang, Yi1, Autor
Tayebjee, Murad J. Y.1, Autor
Smyth, Suntrana1, Autor
Dvorak, Miroslav1, Autor
Xiaoming, Wen1, Autor
Hongze, Xia1, Autor
Heilmann, Martin2, Autor           
Yuanxun, Liao1, Autor
Zewen, Zhang1, Autor
Williamson, Todd1, Autor
Williams, Joshua1, Autor
Bremner, Stephen1, Autor
Shrestha, Santosh1, Autor
Shujuan, Huang1, Autor
Schmidt, Timothy W.1, Autor
Conibeer, Gavin J.1, Autor
Affiliations:
1external, ou_persistent22              
2Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364725              

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Schlagwörter: JUNCTION SOLAR-CELLS; QUANTUM-WELLS; RELAXATION-TIME; INGAN EPILAYERS; EFFICIENCY; DYNAMICS; FILMS; GAAS; SEMICONDUCTORS; ALLOYSPhysics;
 Zusammenfassung: We have investigated the ultrafast carrier dynamics in a 1 mu m bulk In0.265Ga0.735N thin film grown using energetic neutral atom-beam lithography/epitaxy molecular beam epitaxy. Cathodoluminescence and X-ray diffraction experiments are used to observe the existence of indium-rich domains in the sample. These domains give rise to a second carrier population and biexponential carrier cooling is observed with characteristic lifetimes of 1.6 and 14 ps at a carrier density of 1.3 x 10 16 cm(-3). A combination of band-filling, screening, and hot-phonon effects gives rise to a two-fold enhanced mono-exponential cooling rate of 28 ps at a carrier density of 8.4 x 10(18) cm(-3). This is the longest carrier thermalization time observed in bulk InGaN alloys to date. (C) 2016 AIP Publishing LLC.

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Sprache(n): eng - English
 Datum: 2016
 Publikationsstatus: Online veröffentlicht
 Seiten: 5
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: ISI: 000373601400016
DOI: 10.1063/1.4945594
 Art des Abschluß: -

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Titel: APPLIED PHYSICS LETTERS
Genre der Quelle: Zeitschrift
 Urheber:
Affiliations:
Ort, Verlag, Ausgabe: 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA : AMER INST PHYSICS
Seiten: - Band / Heft: 108 (13) Artikelnummer: 131904 Start- / Endseite: - Identifikator: ISSN: 0003-6951