English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
  Study of high quality spinel zinc gallate nanowires grown using CVD and ALD techniques

Kumar, S., Sarau, G., Tessarek, C., Goebelt, M., Christiansen, S., & Singh, R. (2015). Study of high quality spinel zinc gallate nanowires grown using CVD and ALD techniques. NANOTECHNOLOGY, 26(33): 335603. doi:10.1088/0957-4484/26/33/335603.

Item is

Files

show Files

Locators

show

Creators

show
hide
 Creators:
Kumar, Sudheer1, Author
Sarau, G.2, Author           
Tessarek, C.2, Author           
Goebelt, M.3, Author           
Christiansen, S.2, 3, Author           
Singh, R.1, Author
Affiliations:
1external, ou_persistent22              
2Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364725              
3Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364716              

Content

show
hide
Free keywords: ZNO THIN-FILMS; CHEMICAL-VAPOR-DEPOSITION; SOLID-STATE REACTION; OPTICAL-PROPERTIES; ZNGA2O4 NANOWIRES; SINGLE-CRYSTALLINE; OXIDE; NANOSTRUCTURES; LUMINESCENCE; CATHODOLUMINESCENCEScience & Technology - Other Topics; Materials Science; Physics; Raman spectroscopy; chemical vapor deposition; atomic layer deposition; cathodoluminescence;
 Abstract: High quality single crystalline zinc gallate (ZnGa2O4) nanowires (NWs) were grown using a combination of chemical vapor deposition and atomic layer deposition techniques. Morphological, structural and optical investigations revealed the formation of Ga2O3-ZnO core-shell NWs and their conversion into ZnGa2O4 NWs after annealing via a solid state reaction. This material conversion was systematically confirmed for single NWs by various measurement techniques including scanning and transmission electron microscopy, Raman spectroscopy and voltage-dependent cathodoluminescence. Moreover, a model system based on the obtained results has been provided explaining the formation mechanism of the ZnGa2O4 NWs.

Details

show
hide
Language(s): eng - English
 Dates: 2015
 Publication Status: Published online
 Pages: 9
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: NANOTECHNOLOGY
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND : IOP PUBLISHING LTD
Pages: - Volume / Issue: 26 (33) Sequence Number: 335603 Start / End Page: - Identifier: ISSN: 0957-4484