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  Early stages of oxide growth in H-terminated silicon nanowires: determination of kinetic behavior and activation energy

Bashouti, M. Y., Sardashti, K., Ristein, J., & Christiansen, S. H. (2012). Early stages of oxide growth in H-terminated silicon nanowires: determination of kinetic behavior and activation energy. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 14(34), 11877-11881. doi:10.1039/c2cp41709j.

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Datensatz-Permalink: https://hdl.handle.net/11858/00-001M-0000-002D-6943-3 Versions-Permalink: https://hdl.handle.net/11858/00-001M-0000-002D-6944-1
Genre: Zeitschriftenartikel

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 Urheber:
Bashouti, Muhammad Y.1, Autor           
Sardashti, Kasra2, Autor
Ristein, Juergen2, Autor
Christiansen, Silke H.1, 3, Autor           
Affiliations:
1Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364725              
2external, ou_persistent22              
3Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364716              

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Schlagwörter: FIELD-EFFECT TRANSISTORS; UNIFIED CHEMICAL-MODEL; TEMPERATURE OXIDATION; INITIAL OXIDATION; SI(111) SURFACES; REACTING SI; FUNCTIONALITIES; PASSIVATION; THIN; SPECTROSCOPYChemistry; Physics;
 Zusammenfassung: Silicon nanowires (Si NWs) terminated with hydrogen atoms exhibit higher activation energy under ambient conditions than equivalent planar Si(100). The kinetics of sub-oxide formation in hydrogen-terminated Si NWs derived from the complementary XPS surface analysis attribute this difference to the Si-Si backbond and Si-H bond propagation which controls the process at lower temperatures (T < 200 degrees C). At high temperatures (T >= 200 degrees C), the activation energy was similar due to self-retarded oxidation. This finding offers the understanding of early-stage oxide growth that affects the conductance of the near-gap channels leading towards more efficient Si NW electronic devices.

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Sprache(n): eng - English
 Datum: 2012
 Publikationsstatus: Erschienen
 Seiten: 5
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: ISI: 000307305000002
DOI: 10.1039/c2cp41709j
 Art des Abschluß: -

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Titel: PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Genre der Quelle: Zeitschrift
 Urheber:
Affiliations:
Ort, Verlag, Ausgabe: THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND : ROYAL SOC CHEMISTRY
Seiten: - Band / Heft: 14 (34) Artikelnummer: - Start- / Endseite: 11877 - 11881 Identifikator: ISSN: 1463-9076