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  Molecular Gating of Silicon Nanowire Field-Effect Transistors with Nonpolar Analytes

Paska, Y., Stelzner, T., Assad, O., Tisch, U., Christiansen, S., & Haick, H. (2012). Molecular Gating of Silicon Nanowire Field-Effect Transistors with Nonpolar Analytes. ACS NANO, 6(1), 335-345. doi:10.1021/nn203653h.

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Paska, Yair1, Author
Stelzner, Thomas1, Author
Assad, Ossama1, Author
Tisch, Ulrike1, Author
Christiansen, Silke2, 3, Author           
Haick, Hossam1, Author
Affiliations:
1external, ou_persistent22              
2Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364716              
3Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364725              

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Free keywords: ELECTRICAL-PROPERTIES; SI NANOWIRES; SENSORS; DEVICES; OXIDE; MONOLAYER; INTERFACE; GROWTH; ARRAYS; GATEChemistry; Science & Technology - Other Topics; Materials Science; silicon; nanowire; transistor; sensor; molecular gating;
 Abstract: Silicon nanowire field-effect transistors (Si NW FETs) have been used as powerful sensors for chemical and biological species. The detection of polar species has been attributed to variations in the electric field at the conduction channel due to molecular gating with polar molecules. However, the detection of nonpolar analytes with Si NW FETs has not been well understood to date. In this paper, we experimentally study the detection of nonpolar species and model the detection process based on changes in the carrier mobility, voltage threshold, off-current, off-voltage, and subthreshold swing of the Si NW FET. We attribute the detection of the nonpolar species to molecular gating, due to two Indirect effects: (i) a change in the dielectric medium close to the Si NW surface and (ii) a change in the charged surface states at the functionality of the SI NW surface. The contribution of these two effects to the overall measured sensing signal is determined and discussed. The results provide a launching pad for real-world sensing applications, such as environmental monitoring, homeland security, food quality control, and medicine.

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Language(s): eng - English
 Dates: 2012
 Publication Status: Issued
 Pages: 11
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: ISI: 000299368300043
DOI: 10.1021/nn203653h
 Degree: -

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Title: ACS NANO
Source Genre: Journal
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Publ. Info: 1155 16TH ST, NW, WASHINGTON, DC 20036 USA : AMER CHEMICAL SOC
Pages: - Volume / Issue: 6 (1) Sequence Number: - Start / End Page: 335 - 345 Identifier: ISSN: 1936-0851