ausblenden:
Schlagwörter:
FIELD-EFFECT TRANSISTORS; BEAM-INDUCED DEPOSITION; FOCUSED
ELECTRON-BEAM; SILICON NANOWIRES; ION-BEAM; ZNO NANOWIRES; ARRAYS; SI;
GOLD; PERFORMANCEChemistry; Science & Technology - Other Topics; Materials Science;
Physics; Focused ion beam (FIB); focused electron beam induced deposition
(FEBID); vapor liquid solid growth (VLS); silicon nanowire; nanowire;
chemical vapor deposition (CVD); postprocessing;
Zusammenfassung:
We present a novel minimally invasive postprocessing method for catalyst templating based on focused charged particle beam structuring, which enables a localized vapor liquid solid (VLS) growth of individual nanowires on prefabricated three-dimensional micro- and nanostructures. Gas-assisted focused electron beam induced deposition (FEBID) was used to deposit a SiO(x) surface layer of about 10 x 10 mu m(2) on top of a silicon atomic force microscopy cantilever. Gallium focused ion beam (FIB) milling was used to make a hole through the SiO(x) layer into the underlying silicon. The hole was locally filled with a gold catalyst via FEBID using either Me(2)Au(tfac) or Me(2)Au(acac) as precursor. Subsequent chemical vapor deposition (CVD)-induced VLS growth using a mixture of SiH(4) and Ar resulted in individual high quality crystalline nanowires. The process, its yield, and the resulting angular distribution/crystal orientation of the silicon nanowires are discussed. The presented combined FIB/FEBID/CVD-VLS process is currently the only proven method that enables the growth of individual monocrystalline Si nanowires on prestructured substrates and devices.
