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  Correlating internal stresses, electrical activity and defect structure on the micrometer scale in EFG silicon ribbons

Sarau, G., Christiansen, S., Holla, M., & Seifert, W. (2011). Correlating internal stresses, electrical activity and defect structure on the micrometer scale in EFG silicon ribbons. SI, 95(8), 2264-2271. doi:10.1016/j.solmat.2011.03.039.

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 Creators:
Sarau, G.1, Author              
Christiansen, S.1, 2, Author              
Holla, M.3, Author
Seifert, W.3, Author
Affiliations:
1Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364725              
2Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364716              
3external, ou_persistent22              

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Free keywords: MULTICRYSTALLINE SILICON; GRAIN-BOUNDARIES; RESIDUAL-STRESSEnergy & Fuels; Materials Science; Physics; Internal stresses; Recombination activity; Microstructure; Multicrystalline silicon; Dislocations; Raman;
 Abstract: In the present paper, we study the influence of defects through their stress fields on the electrical activity and residual stress states of as-grown edge-defined film-feed (EFG) multicrystalline silicon (mc-Si) ribbons. We apply a combination of micro-Raman spectroscopy, electron beam induced current, defect etching and electron backscatter diffraction techniques that enables us to correlate internal stresses, recombination activity and microstructure on the micrometer scale. The stress fields of defect structures are considered to be too small (several tens of MPa) to influence directly the electrical activity, but they can enhance it via stress-induced accumulation of metallic impurities. It is commonly found that not all recombination-active dislocations on grain boundaries (GBs) and within grains are accompanied by internal stresses. The reason for this is that dislocations interact with each other and tend to locally rearrange in configurations of minimum strain energy in which their stress fields can cancel partially, totally or not at all. The outcome is a nonuniform distribution of electrical activity and internal stresses along the same GB, along different GBs of similar character as well as inside the same grain and inside different grains of similar crystallographic orientations. Our work has implications for developing crystal growth procedures that may lead to reduced internal stresses and consequently to improved electrical quality and mechanical stability of mc-Si materials by means of controlled interaction between structural defects. (C) 2011 Elsevier B.V. All rights reserved.

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Language(s): eng - English
 Dates: 2011
 Publication Status: Published in print
 Pages: 8
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
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Title: SI
Source Genre: Issue
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Publ. Info: PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS : ELSEVIER SCIENCE BV
Pages: - Volume / Issue: 95 (8) Sequence Number: - Start / End Page: 2264 - 2271 Identifier: ISSN: 0927-0248

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Title: SOLAR ENERGY MATERIALS AND SOLAR CELLS
  Alternative Title : SOL ENERG MAT SOL C
  Alternative Title : Sol. Energy Mater. Sol. Cells
Source Genre: Journal
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Pages: - Volume / Issue: 95 Sequence Number: - Start / End Page: - Identifier: -