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キーワード:
FIELD-EFFECT TRANSISTORS; MOLECULAR-BEAM EPITAXY; LIQUID-SOLID GROWTH;
STRANSKI-KRASTANOW GROWTH; DOPED SILICON NANOWIRES; SOLAR-CELLS;
GERMANIUM NANOWIRES; GE; HETEROJUNCTIONS; EVAPORATIONScience & Technology - Other Topics; Materials Science; Physics;
要旨:
Axial heterojunctions between pure silicon and pure germanium in nanowires have been realized combining pulsed laser deposition, chemical vapor deposition and electron beam evaporation in a vapor-liquid-solid nanowire growth experiment using gold nanoparticles as catalyst for the 1D wire growth. Energy dispersive x-ray mappings and line scans show a compositional transition from pure silicon to pure germanium and vice versa with exponential and thus comparably sharp transition slopes. Based on these results not only Si-Ge heterojunctions seem to be possible using the vapor-liquid-solid growth process but also heterojunctions in optoelectronic III-V compounds such as InGaAs/GaAs or group III nitride compounds such as InGaN/GaN as well as axial p-n junctions in Si nanowires.
