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  Enhanced Sensing of Nonpolar Volatile Organic Compounds by Silicon Nanowire Field Effect Transistors

Paska, Y., Stelzner, T., Christiansen, S., & Haick, H. (2011). Enhanced Sensing of Nonpolar Volatile Organic Compounds by Silicon Nanowire Field Effect Transistors. ACS NANO, 5(7), 5620-5626. doi:10.1021/nn201184c.

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 Creators:
Paska, Yair1, Author
Stelzner, Thomas1, Author
Christiansen, Silke2, 3, Author           
Haick, Hossam1, Author
Affiliations:
1external, ou_persistent22              
2Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364716              
3Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364725              

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Free keywords: EXHALED BREATH; CARBON NANOTUBES; LUNG-CANCER; NANOSENSORS; MONOLAYERS; DIAGNOSIS; ARRAYS; POLARChemistry; Science & Technology - Other Topics; Materials Science; silicon; nanowire; transistor; sensor; volatile organic compound; nonpolar;
 Abstract: Silicon nanowire field effect transistors (Si NW FETs) are emerging as powerful sensors for direct detection of biological and chemical species. However, the low sensitivity of the Si NW FET sensors toward nonpolar volatile organic compounds (VOCs) Is problematic for many applications. In this study, we show that modifying Si NW FETs with a silane monolayer having a low fraction of S1-O-Si bonds between the adjacent molecules greatly enhances the sensitivity toward nonpoiar VOCs. This can be explained in terms of an indirect sensor -VOC interaction, whereby the nonpolar VOC molecules induce conformational changes in the organic monoiayer, affecting (i) the dielectric constant and/or effective dipole moment of the organic monolayer and/or (ii) the density of charged surface states at the SiO(2)/monolayer interface. In contrast, polar VOCs are sensed directly via VOC-induced changes in the Si NW charge carriers, most probably due to electrostatic interaction between the Si NW and polar VOCs. A semiempirical model for the VOC-induced conductivity changes in the Si NW FETs is presented and discussed.

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Language(s): eng - English
 Dates: 2011
 Publication Status: Issued
 Pages: 7
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: ISI: 000293035200039
DOI: 10.1021/nn201184c
 Degree: -

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Title: ACS NANO
Source Genre: Journal
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Publ. Info: 1155 16TH ST, NW, WASHINGTON, DC 20036 USA : AMER CHEMICAL SOC
Pages: - Volume / Issue: 5 (7) Sequence Number: - Start / End Page: 5620 - 5626 Identifier: ISSN: 1936-0851