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  Efficient III-V tunneling diodes with ErAs recombination centers

Preu, S., Malzer, S., Doehler, G. H., Lu, H., Gossard, A. C., & Wang, L. J. (2010). Efficient III-V tunneling diodes with ErAs recombination centers. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 25(11): 115004. doi:10.1088/0268-1242/25/11/115004.

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Datensatz-Permalink: https://hdl.handle.net/11858/00-001M-0000-002D-6A93-9 Versions-Permalink: https://hdl.handle.net/11858/00-001M-0000-002D-6A94-7
Genre: Zeitschriftenartikel

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 Urheber:
Preu, S.1, 2, Autor           
Malzer, S.3, Autor           
Doehler, G. H.4, Autor           
Lu, H.5, Autor
Gossard, A. C.5, Autor
Wang, L. J.1, Autor           
Affiliations:
1Max Planck Fellow Group, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364711              
2International Max Planck Research School, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364697              
3Guests, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364696              
4External Organizations, ou_persistent22              
5external, ou_persistent22              

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Schlagwörter: SEMICONDUCTOR DIGITAL COMPOSITE; SOLAR-CELLS; GAAS; MICROSTRUCTURE; JUNCTION; ISLANDS; GROWTH; INGAASEngineering; Materials Science; Physics;
 Zusammenfassung: We report on recombination diodes containing monolayer depositions of ErAs between highly doped n- and p-layers in the (Al)GaAs and In(Al)GaAs material system. The ErAs material provides metallic states across the band gap of the host semiconductor that act as efficient recombination centers. Both electrons and holes can tunnel into the ErAs, resulting in extremely high tunneling current densities in the tens of kA cm(-2) range. A device resistance area product of 1-2 x 10(-5) Omega cm(2) at low bias (+/- 0.2 V) has been measured. Measurements on In(Al)GaAs and (Al)GaAs diodes will be compared to a simple theoretical model. Low band gap and high (p-) doping levels are identified as key parameters for achieving highest recombination currents. Compared to ErAs-free diodes, ErAs-enhanced recombination diodes provide orders of magnitude higher current densities at both moderate and low forward and reverse bias. This is attributed to the smaller and narrower tunnel barriers from the n- and p- layers into the ErAs compared to tunneling from the n- to the p-side through the whole depletion region.

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Sprache(n): eng - English
 Datum: 2010
 Publikationsstatus: Online veröffentlicht
 Seiten: 6
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: ISI: 000284528300004
DOI: 10.1088/0268-1242/25/11/115004
 Art des Abschluß: -

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Titel: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Genre der Quelle: Zeitschrift
 Urheber:
Affiliations:
Ort, Verlag, Ausgabe: DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND : IOP PUBLISHING LTD
Seiten: - Band / Heft: 25 (11) Artikelnummer: 115004 Start- / Endseite: - Identifikator: ISSN: 0268-1242