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  Roughness of silicon nanowire sidewalls and room temperature photoluminescence

Sivakov, V. A., Voigt, F., Berger, A., Bauer, G., & Christiansen, S. H. (2010). Roughness of silicon nanowire sidewalls and room temperature photoluminescence. PHYSICAL REVIEW B, 82(12): 125446. doi:10.1103/PhysRevB.82.125446.

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 Creators:
Sivakov, Vladimir A.1, Author
Voigt, Felix1, Author
Berger, Andreas1, Author
Bauer, Gottfried1, Author
Christiansen, Silke H.2, 3, Author              
Affiliations:
1external, ou_persistent22              
2Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364716              
3Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364725              

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Free keywords: POROUS SILICON; VISIBLE LUMINESCENCE; QUANTUM CONFINEMENT; OPTICAL-PROPERTIES; LIGHT-EMISSION; ARRAYS; SIZE; NANOCRYSTALS; SILOXENE; SPECTRAPhysics;
 Abstract: Strong room temperature visible (red-orange) photoluminescence (PL) has been observed in silicon nanowires (SiNWs) that were realized by wet chemical etching of heavily (arsenic, As: 10(20) cm(-3)) and lowly doped (boron, B: 10(15) cm(-3)) single crystalline silicon (Si) wafers. Optical characterization of these SiNWs by PL combined with structural characterization by transmission and scanning electron microscopy strongly suggest that the visible PL at room temperature results from the rough SiNW sidewall structure that is composed of nanoscale features in which quantum confinement effects may occur.

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Language(s): eng - English
 Dates: 2010
 Publication Status: Published online
 Pages: 6
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Degree: -

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Title: PHYSICAL REVIEW B
Source Genre: Journal
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Publ. Info: ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA : AMER PHYSICAL SOC
Pages: - Volume / Issue: 82 (12) Sequence Number: 125446 Start / End Page: - Identifier: ISSN: 1098-0121