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  Polarization sensitive lateral photoconductivity in GaAs/AlGaAs quantum well based structures on low-temperature grown GaAs(001)

Arora, A., Ghosh, S., Arora, B. M., Malzer, S., & Doehler, G. (2010). Polarization sensitive lateral photoconductivity in GaAs/AlGaAs quantum well based structures on low-temperature grown GaAs(001). APPLIED PHYSICS LETTERS, 97(8): 081902. doi:10.1063/1.3479501.

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Datensatz-Permalink: https://hdl.handle.net/11858/00-001M-0000-002D-6AC5-A Versions-Permalink: https://hdl.handle.net/11858/00-001M-0000-002D-6AC6-8
Genre: Zeitschriftenartikel

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 Urheber:
Arora, Ashish1, Autor
Ghosh, Sandip1, Autor
Arora, B. M.1, Autor
Malzer, Stefan2, Autor           
Doehler, Gottfried3, Autor           
Affiliations:
1external, ou_persistent22              
2Guests, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364696              
3External Organizations, ou_persistent22              

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Schlagwörter: ORDERED GAINP; PHOTODETECTORS; LASERSPhysics;
 Zusammenfassung: Polarization-resolved lateral-photoconductivity measurements are reported on device structures made of GaAs/Al(0.3)Ga(0.7)As quantum wells sandwiched between low-temperature grown GaAs(001) layers. The mesa device structures have long length (3 mm parallel to y) and narrow width (10 and 20 mu m parallel to x) in the (001) plane. For light incident along [001], the ground state light-hole exciton transition is much stronger for light polarization E parallel to x, compared to E parallel to y. The heavy-hole exciton transition shows a weaker polarization anisotropy of opposite sign, being stronger for E parallel to y. Through calculations based on the Bir-Pikus Hamiltonian, the observed in-plane optical polarization anisotropy is shown to arise from valence band mixing induced by anisotropic strain in the plane of quantum wells. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3479501]

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Sprache(n): eng - English
 Datum: 2010
 Publikationsstatus: Online veröffentlicht
 Seiten: 3
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: ISI: 000281306500021
DOI: 10.1063/1.3479501
 Art des Abschluß: -

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Titel: APPLIED PHYSICS LETTERS
Genre der Quelle: Zeitschrift
 Urheber:
Affiliations:
Ort, Verlag, Ausgabe: CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA : AMER INST PHYSICS
Seiten: - Band / Heft: 97 (8) Artikelnummer: 081902 Start- / Endseite: - Identifikator: ISSN: 0003-6951