非表示:
キーワード:
NONLINEAR REFRACTION; SINGLE-BEAM; SILICON; ABSORPTION; DISPERSION;
CRYSTALS; SOLIDS; LIGHTInstruments & Instrumentation; Physics; data acquisition; elemental semiconductors; gallium arsenide; gallium
compounds; high-speed optical techniques; III-V semiconductors; optical
switches; photonic band gap; photonic crystals; silicon;
要旨:
We describe an ultrafast time resolved pump-probe spectroscopy setup aimed at studying the switching of nanophotonic structures. Both femtosecond pump and probe pulses can be independently tuned over broad frequency range between 3850 and 21 050 cm(-1). A broad pump scan range allows a large optical penetration depth, while a broad probe scan range is crucial to study strongly photonic crystals. A new data acquisition method allows for sensitive pump-probe measurements, and corrects for fluctuations in probe intensity and pump stray light. We observe a tenfold improvement of the precision of the setup compared to laser fluctuations, allowing a measurement accuracy of better than Delta R=0.07% in a 1 s measurement time. Demonstrations of the improved technique are presented for a bulk Si wafer, a three-dimensional Si inverse opal photonic bandgap crystal, and z-scan measurements of the two-photon absorption coefficient of Si, GaAs, and the three-photon absorption coefficient of GaP in the infrared wavelength range.
