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  Atomic scale structure and optical emission of AlxGa1-xAs/GaAs quantum wells

Ropers, C., Wenderoth, M., Winking, L., Reusch, T. C. G., Erdmann, M., Ulbrich, R. G., et al. (2007). Atomic scale structure and optical emission of AlxGa1-xAs/GaAs quantum wells. PHYSICAL REVIEW B, 75(11): 115317. doi:10.1103/PhysRevB.75.115317.

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 Creators:
Ropers, C.1, Author
Wenderoth, M.1, Author
Winking, L.1, Author
Reusch, T. C. G.1, Author
Erdmann, M.1, Author
Ulbrich, R. G.1, Author
Grochol, M.1, Author
Grosse, F.1, Author
Zimmermann, R.1, Author
Malzer, S.2, Author           
Doehler, G. H.2, Author           
Affiliations:
1external, ou_persistent22              
2Max Planck Research Group, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364712              

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Free keywords: EXCITON BINDING-ENERGY; SEMICONDUCTOR NANOSTRUCTURES; MASS; NONPARABOLICITY; THERMALIZATION; FLUCTUATIONS; LOCALIZATION; DOTSPhysics;
 Abstract: A combined study of the optical and structural properties of AlGaAs/GaAs quantum wells is presented. Microphotoluminescence experiments, magnetomicrophotoluminescence, and atomically resolved cross-sectional scanning tunneling microscopy were performed on the same quantum well sample. Constant-current topographs with aluminum and/or gallium sensitivity are used to directly extract disorder potentials. Using these potentials, exciton absorption spectra, microphotoluminescence spectra, and diamagnetic shifts of individual exciton states are calculated in an envelope function approximation. Very good agreement between the theoretical and experimental results is found.

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Language(s): eng - English
 Dates: 2007
 Publication Status: Published online
 Pages: 7
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Degree: -

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Title: PHYSICAL REVIEW B
Source Genre: Journal
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Publ. Info: ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA : AMER PHYSICAL SOC
Pages: - Volume / Issue: 75 (11) Sequence Number: 115317 Start / End Page: - Identifier: ISSN: 1098-0121