English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
Add to Basket
 Local TagsRelease HistoryDetailsSummary
  Efficient CW terahertz generation with n-i-pn-i-p photomixers

Doehler, G. H., Preu, S., Malzer, S., Wang, L. J., Hanson, M., Zimmerman, J. D., et al. (2007). Efficient CW terahertz generation with n-i-pn-i-p photomixers. In PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007 (pp. 345-350). 345 E 47TH ST, NEW YORK, NY 10017 USA: IEEE.

Item is

 

show all hide all

Basic

show hide
Item Permalink: https://hdl.handle.net/11858/00-001M-0000-002D-6D64-0 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-002D-6D65-E
Genre: Conference Paper

Files

show Files

Locators

show

Creators

show
hide
 Creators:
Doehler, G. H.1, Author           
Preu, S.1, 2, Author           
Malzer, S.1, Author           
Wang, L. J.1, Author           
Hanson, M.3, Author
Zimmerman, J. D.3, Author
Gossard, A. C.3, Author
Wilkinson, T. L. J.3, Author
Brown, E. R.3, Author
Affiliations:
1Max Planck Research Group, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364712              
2International Max Planck Research School, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364697              
3external, ou_persistent22              

Content

show
hide
Free keywords: GAASEngineering; Physics; semiconductor nanostructures; high-field ballistic transport; frequency mixing; optoelectronics;
 Abstract: We report on a concept for highly efficient generation of terahertz (THz) radiation and its verification by experimental studies. The THz generation is based on photomixing in a periodic stack of specially designed pinphotodiodes. This design allows to suppress the slow hole transport, to optimize high-speed ballistic electron transport in the photodiodes and, at the same time, to avoid the degradation of the high-frequency performance due to the usual "RC- roll-off".

Details

show
hide
Language(s): eng - English
 Dates: 2007
 Publication Status: Issued
 Pages: 6
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: ISI: 000254274500081
DOI: 10.1109/IWPSD.2007.4472515
 Degree: -

Event

show
hide
Title: 14th International Workshop on the Physics of Semiconductor Devices
Place of Event: Indian Inst Technol, Mumbai, INDIA
Start-/End Date: 2007-12-17 - 2007-12-20

Legal Case

show

Project information

show

Source 1

show
hide
Title: PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007
Source Genre: Proceedings
 Creator(s):
Affiliations:
Publ. Info: 345 E 47TH ST, NEW YORK, NY 10017 USA : IEEE
Pages: - Volume / Issue: - Sequence Number: - Start / End Page: 345 - 350 Identifier: ISBN: 978-1-4244-1727-8