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  Bulk and contact-sensitized photocarrier generation in single layer organic devices

Ray, D., Patankar, M. P., Doehler, G. H., & Narasimhan, K. L. (2006). Bulk and contact-sensitized photocarrier generation in single layer organic devices. JOURNAL OF APPLIED PHYSICS, 100(11):. doi:10.1063/1.2400505.

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資料種別: 学術論文

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 作成者:
Ray, Debdutta1, 著者
Patankar, Meghan P.1, 著者
Doehler, Gottfried H.2, 著者           
Narasimhan, K. L.1, 著者
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1external, ou_persistent22              
2Max Planck Research Group, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364712              

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キーワード: LIGHT-EMITTING-DIODES; FILM SOLAR-CELLS; CARRIER GENERATION; EXCITON DIFFUSION; THIN-FILMS; FIELD; RECOMBINATION; EFFICIENCY; MECHANISMPhysics;
 要旨: In this paper, we report on the photoelectronic properties of N,N-'-diphenyl-N,N-'-bis(3-methylphenyl)-(1,1(')-biphenyl)-4,4(')-diamine (TPD) studied in sandwich geometry. In particular, we have obtained from both forward and reverse bias measurements the mu tau product for holes in TPD. mu is the hole mobility and tau is the carrier trapping time. The mu tau product is a measure of the electronic quality of the material and allows a quantitative comparison of different samples. We have carried out numerical simulations to understand the photocurrent in these structures. We show that in reverse bias, the photocurrent (PC) is due to carrier generation in the bulk of the sample. The carrier generation is governed by field assisted exciton dissociation at electric fields greater than 10(6) V/cm. At lower fields the generation of carriers occurs spontaneously in the bulk of the sample. In forward bias, the photocurrent is due to exciton dissociation at the indium tin oxide contact. We also obtain a mu tau product for holes from forward bias PC measurements which is in agreement with the value obtained from reverse bias measurements. Based on our experiments, we demonstrate that TPD in a sandwich structure is a good candidate for cheap large area visible blind ultraviolet detector arrays. (c) 2006 American Institute of Physics.

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言語: eng - English
 日付: 2006
 出版の状態: オンラインで出版済み
 ページ: 8
 出版情報: -
 目次: -
 査読: -
 識別子(DOI, ISBNなど): ISI: 000242887400097
DOI: 10.1063/1.2400505
 学位: -

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出版物名: JOURNAL OF APPLIED PHYSICS
種別: 学術雑誌
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出版社, 出版地: CIRCULATION & FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA : AMER INST PHYSICS
ページ: - 巻号: 100 (11) 通巻号: 113727 開始・終了ページ: - 識別子(ISBN, ISSN, DOIなど): ISSN: 0021-8979