ausblenden:
Schlagwörter:
SEMICONDUCTOR NANOSTRUCTURES; FINE-STRUCTURE; LANDAU-LEVELS; DOTS;
THERMALIZATION; ENERGY; SYSTEM; WIRES; HOLE; MASSPhysics;
Zusammenfassung:
A correlation between the diamagnetic shift and transition energy of disorder-localized excitons is observed in magnetomicrophotoluminescence (mu PL) on narrow GaAs/Al0.3Ga0.7As quantum wells (QW's). The QW's were grown by molecular-beam epitaxy without growth interruption at the interfaces. mu PL spectra were obtained in a confocal setup with the magnetic field applied normal to the QW plane. The lowest-energy exciton states have the smallest diamagnetic coefficients; the exciton diamagnetic shift in the localized exciton tail of the QW emission spectra increases by a factor of 2 as a function of transition energy. The positive correlation between diamagnetic shift and emission energy reveals exciton localization by short-range correlated interface disorder.
