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  Depth resolved scanning tunneling spectroscopy of shallow acceptors in gallium arsenide

Loth, S., Wenderoth, M., Winking, L., Ulbrich, R., Malzer, S., & Dohler, G. (2006). Depth resolved scanning tunneling spectroscopy of shallow acceptors in gallium arsenide. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(3B), 2193-2196.

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 Creators:
Loth, S1, Author
Wenderoth, M1, Author
Winking, L1, Author
Ulbrich, RG1, Author
Malzer, S2, Author           
Dohler, GH2, Author           
Affiliations:
1external, ou_persistent22              
2Max Planck Research Group, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364712              

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Free keywords: MICROSCOPYPhysics; electronic structure; III-V semiconductors; shallow dopants; scanning tunneling microscopy;
 Abstract: Scanning tunneling spectroscopy (STS) at 8 K is used to study single shallow acceptors embedded near {110}-surfaces ill gallium arsenide (GaAs). At appropriate bias voltages the circularly symmetric contrast normally observed for charged defects evolves into a pronounced triangular shaped protrusion. Comparing dopants at different depths under the surface, we find a linear shift of the associated conductivity maximum along (112) directions. Comparative Studies of Carbon and Zinc acceptors in a modulation-doped heterostructure reveal that both dopants act similarly. The experimental findings Suggest that the highly anisotropic features induced by acceptors resemble a bulk property of the GaAs crystal prominently demonstrating its Ziricblende symmetry.

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Language(s): eng - English
 Dates: 2006
 Publication Status: Issued
 Pages: 4
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: ISI: 000236624100073
DOI: 10.1143/JJAP.45.2193
 Degree: -

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Title: 13th International Conference on Scanning Tunneling Microscopy, Spectroscopy and Related Technique held in Conjunction with the 13th International Colloquium on Scanning Probe Microscopy
Place of Event: Sapporo, JAPAN
Start-/End Date: 2005-07-03 - 2005-07-08

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Title: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Source Genre: Journal
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Affiliations:
Publ. Info: 5F YUSHIMA BLDG, 2-31-22 YUSHIMA, BUNKYO-KU, TOKYO, 113-0034, JAPAN : INST PURE APPLIED PHYSICS
Pages: - Volume / Issue: 45 (3B) Sequence Number: - Start / End Page: 2193 - 2196 Identifier: ISSN: 0021-4922