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  Ultraviolet-emitting ZnO nanowhiskers prepared by a vapor transport process on prestructured surfaces with self-assembled polymers

Haupt, M., Ladenburger, A., Sauer, R., Thonke, K., Glass, R., Roos, W., et al. (2003). Ultraviolet-emitting ZnO nanowhiskers prepared by a vapor transport process on prestructured surfaces with self-assembled polymers. Journal of Applied Physics, 93(10), 6252-6257. doi:10.1063/1.1563845.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0028-367B-D Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002E-7ED3-2
Genre: Journal Article

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 Creators:
Haupt, M., Author
Ladenburger, A., Author
Sauer, R., Author
Thonke, K., Author
Glass, R.1, Author              
Roos, W.1, Author              
Spatz, Joachim P.1, 2, Author              
Rauscher, H., Author
Riethmüller, S., Author
Möller, M., Author
Affiliations:
1Cellular Biophysics, Max Planck Institute for Medical Research, Max Planck Society, ou_2364731              
2Biophysical Chemistry, Institute of Physical Chemistry, University of Heidelberg, 69120 Heidelberg, Germany, ou_persistent22              

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 Abstract: ZnO wires were grown by a vapor–liquid–solid phase transport process. Self-assembled Au nano-clusters act as a catalyst or seed for the highly oriented growth of so-called ZnO whiskers on sapphire substrates by a vapor–liquid–solid phase transport process. The ZnO nanowires were more than 500 nm high and smaller than 30 nm in diameter. Low-temperature photoluminescence measurements reveal intense and detailed ultraviolet light emission near the opitical band gap of ZnO at 3.37 eV. The ZnO nanowires show almost no broad green photoluminescence emission band related to oxygen defects and only a weak signal due to donor–acceptor pair recombination. X-ray diffraction proves that the ZnO wires were grown c-plane oriented on an a-plane sapphire substrate with high crystal quality most likely because of a kind of self-purification during the growth process.

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Language(s): eng - English
 Dates: 2002-09-242003-02-042003-05-012003
 Publication Status: Published in print
 Pages: 7
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1063/1.1563845
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Title: Journal of Applied Physics
  Abbreviation : J. Appl. Phys.
Source Genre: Journal
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Publ. Info: New York, NY : AIP Publishing
Pages: - Volume / Issue: 93 (10) Sequence Number: - Start / End Page: 6252 - 6257 Identifier: ISSN: 0021-8979
CoNE: https://pure.mpg.de/cone/journals/resource/991042723401880