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  Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure

Berry, T., Ouardi, S., Fecher, G. H., Balke, B., Kreiner, G., Auffermann, G., et al. (2017). Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure. Physical Chemistry Chemical Physics, 19(2), 1543-1550. doi:10.1039/c6cp06859f.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-002C-80EB-9 Version Permalink: http://hdl.handle.net/21.11116/0000-0000-6E0A-B
Genre: Journal Article

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 Creators:
Berry, T.1, Author              
Ouardi, S.2, Author
Fecher, G. H.3, Author              
Balke, B.2, Author
Kreiner, G.4, Author              
Auffermann, G.5, Author              
Schnelle, W.6, Author              
Felser, C.7, Author              
Affiliations:
1Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
2External Organizations, ou_persistent22              
3Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863431              
4Guido Kreiner, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863433              
5Gudrun Auffermann, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863432              
6Walter Schnelle, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863441              
7Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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 Abstract: The thermoelectric properties of the n-type semiconductor TiNiSn were optimized by partial substitution with metallic MnNiSb in the half Heusler structure. Herein, we study the transport properties and intrinsic phase separation in the Ti1-xMnxNiSn1-xSbx system. The alloys were prepared by arc-melting and annealed at temperatures obtained from differential thermal analysis and differential scanning calorimetry results. The phases were characterized using powder X-ray diffraction patterns, energy-dispersive X-ray spectroscopy, and differential scanning calorimetry. After annealing, the majority phase was TiNiSn with some Ni-rich sites, and the minority phases were primarily Ti6Sn5, Sn and MnSn 2. The Ni-rich sites were caused by Frenkel defects; this led to metal-like behavior in the semiconductor specimens at low temperature. For x <= 0.05 the samples showed an activated conduction, whereas for x > 0.05 they showed metallic character. The figure of merit for x = 0.05 was increased by 61% (zT = 0.45) in comparison with the pure TiNiSn.

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Language(s): eng - English
 Dates: 2017-02-022017-02-02
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: ISI: 000392399400066
DOI: 10.1039/c6cp06859f
 Degree: -

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Title: Physical Chemistry Chemical Physics
  Abbreviation : Phys. Chem. Chem. Phys.
Source Genre: Journal
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Publ. Info: Cambridge, England : Royal Society of Chemistry
Pages: - Volume / Issue: 19 (2) Sequence Number: - Start / End Page: 1543 - 1550 Identifier: ISSN: 1463-9076
CoNE: /journals/resource/954925272413_1