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  In Situ Patterning of Ultrasharp Dopant Profiles in Silicon

Cooil, S. P., Mazzola, F., Klemm, H., Peschel, G., Niu, Y. R., Zakharov, A. A., et al. (2017). In Situ Patterning of Ultrasharp Dopant Profiles in Silicon. ACS Nano, 11(2), 1683-1688. doi:10.1021/acsnano.6b07359.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-002C-C883-8 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-002C-EF27-F
Genre: Journal Article

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Wells-Cooil_2016 submission formatted.pdf (Any fulltext), 6MB
 
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 Creators:
Cooil, Simon P.1, 2, Author
Mazzola, Federico1, 3, Author
Klemm, Hagen4, Author           
Peschel, Gina4, Author           
Niu, Yuran R.5, Author
Zakharov, Alexei A.5, Author
Simmons, Michelle Y.6, Author
Schmidt, Thomas4, Author           
Evans, D. Andrew2, Author
Miwa, Jill A.7, Author
Wells, Justin W.2, Author
Affiliations:
1Department of Physics, Norwegian University of Science and Technology (NTNU), N-7491 Trondheim, Norway, ou_persistent22              
2Department of Physics, Aberystwyth University, SY23 3BZ Aberystwyth, United Kingdom, ou_persistent22              
3School of Physics and Astronomy (SUPA), University of St. Andrews, St. Andrews, Fife KY16 9SS, United Kingdom, ou_persistent22              
4Chemical Physics, Fritz Haber Institute, Max Planck Society, ou_24022              
5MAX IV Laboratory, Lund University, 221 00 Lund, Sweden, ou_persistent22              
6Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia, ou_persistent22              
7Department of Physics and Astronomy, Interdisciplinary Nanoscience Center (iNANO), University of Aarhus, 8000 Aarhus C, Denmark, ou_persistent22              

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 Abstract: We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ-layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states.

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 Dates: 2016-11-072017-02-092017-02-092017-02-28
 Publication Status: Issued
 Pages: 6
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1021/acsnano.6b07359
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Title: ACS Nano
Source Genre: Journal
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Publ. Info: Washington, DC : American Chemical Society
Pages: 6 Volume / Issue: 11 (2) Sequence Number: - Start / End Page: 1683 - 1688 Identifier: ISSN: 1936-0851
CoNE: https://pure.mpg.de/cone/journals/resource/1936-0851