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  Topological Quantum Phase Transition and Superconductivity Induced by Pressure in the Bismuth Tellurohalide BiTeI

Qi, Y., Shi, W., Naumov, P. G., Kumar, N., Sankar, R., Schnelle, W., et al. (2017). Topological Quantum Phase Transition and Superconductivity Induced by Pressure in the Bismuth Tellurohalide BiTeI. Advanced Materials, 29(18): 1605965, pp. 1-7. doi:10.1002/adma.201605965.

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 Creators:
Qi, Yanpeng1, Author           
Shi, Wujun1, Author           
Naumov, Pavel G.1, Author           
Kumar, Nitesh1, Author           
Sankar, Raman2, Author
Schnelle, Walter3, Author           
Shekhar, Chandra4, Author           
Chou, Fang-Cheng2, Author
Felser, Claudia5, Author           
Yan, Binghai6, Author           
Medvedev, Sergey A.7, Author           
Affiliations:
1Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
2External Organizations, ou_persistent22              
3Walter Schnelle, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863441              
4Chandra Shekhar, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863428              
5Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              
6Binghai Yan, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863427              
7Sergiy Medvediev, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863438              

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 Abstract: A pressure-induced topological quantum phase transition has been theoretically predicted for the semiconductor bismuth tellurohalide BiTeI with giant Rashba spin splitting. In this work, evolution of the electrical transport properties in BiTeI and BiTeBr is investigated under high pressure. The pressure-dependent resistivity in a wide temperature range passes through a minimum at around 3 GPa, indicating the predicted topological quantum phase transition in BiTeI. Superconductivity is observed in both BiTeI and BiTeBr, while resistivity at higher temperatures still exhibits semiconducting behavior. Theoretical calculations suggest that superconductivity may develop from the multivalley semiconductor phase. The superconducting transition temperature, T-c, increases with applied pressure and reaches a maximum value of 5.2 K at 23.5 GPa for BiTeI (4.8 K at 31.7 GPa for BiTeBr), followed by a slow decrease. The results demonstrate that BiTeX (X = I, Br) compounds with nontrivial topology of electronic states display new ground states upon compression.

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Language(s): eng - English
 Dates: 2017-03-062017-03-06
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: -
 Identifiers: ISI: 000400636400010
DOI: 10.1002/adma.201605965
 Degree: -

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Title: Advanced Materials
  Other : Adv. Mater.
Source Genre: Journal
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Publ. Info: Weinheim : Wiley-VCH
Pages: - Volume / Issue: 29 (18) Sequence Number: 1605965 Start / End Page: 1 - 7 Identifier: ISSN: 0935-9648
CoNE: https://pure.mpg.de/cone/journals/resource/954925570855