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Zusammenfassung:
In this paper, we report the first successful epitaxial synthesis of flat wafer-scale two-dimensional ZnS thin films on singlecrystalline ZnO substrates with high reproducibility, stability, and reliability, despite the large lattice mismatch (approximately 20%) between ZnO and ZnS. The as-grown ZnS was composed of two crystal phases: wurtzite (WZ) and zinc blende (ZB). The epitaxial orientation between the different phases was identified as: [2−1−10] ZnOWZ//[2−1−10] ZnSWZ//[10−1] ZnSZB and (0001) ZnOWZ//
(0001) ZnSWZ//(111) ZnSZB. The crystal structure and the strain profile at the interfaces were studied in detail. After a simple etching
treatment, exfoliated large-area free-standing ZnS thin films were
achieved for the first time. The present product is expected to become
valuable to the strategy of growing large-area thin films or heterostructures with a large lattice mismatch.
