English
 
User Manual Privacy Policy Disclaimer Contact us
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
  High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se

Wu, J., Yuan, H., Meng, M., Chen, C., Sun, Y., Chen, Z., et al. (2017). High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se. Nature Nanotechnology, 12(6), 530-535. doi:10.1038/NNANO.2017.43.

Item is

Basic

show hide
Item Permalink: http://hdl.handle.net/11858/00-001M-0000-002D-7958-9 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002D-795B-3
Genre: Journal Article

Files

show Files

Locators

show

Creators

show
hide
 Creators:
Wu, Jinxiong1, Author
Yuan, Hongtao1, Author
Meng, Mengmeng1, Author
Chen, Cheng1, Author
Sun, Yan2, Author              
Chen, Zhuoyu1, Author
Dang, Wenhui1, Author
Tan, Congwei1, Author
Liu, Yujing1, Author
Yin, Jianbo1, Author
Zhou, Yubing1, Author
Huang, Shaoyun1, Author
Xu, H. Q.1, Author
Cui, Yi1, Author
Hwang, Harold Y.1, Author
Liu, Zhongfan1, Author
Chen, Yulin1, Author
Yan, Binghai3, Author              
Peng, Hailin1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
3Binghai Yan, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863427              

Content

show
hide
Free keywords: -
 Abstract: High-mobility semiconducting ultrathin films form the basis of modern electronics, and may lead to the scalable fabrication of highly performing devices. Because the ultrathin limit cannot be reached for traditional semiconductors, identifying new two-dimensional materials with both high carrier mobility and a large electronic bandgap is a pivotal goal of fundamental research(1-9). However, air-stable ultrathin semiconducting materials with superior performances remain elusive at present(10). Here, we report ultrathin films of non-encapsulated layered Bi2O2Se, grown by chemical vapour deposition, which demonstrate excellent air stability and high-mobility semiconducting behaviour. We observe bandgap values of similar to 0.8 eV, which are strongly dependent on the film thickness due to quantum-confinement effects. An ultrahigh Hall mobility value of > 20,000 cm(2) V-1 s(-1) is measured in as-grown Bi2O2Se nanoflakes at low temperatures. This value is comparable to what is observed in graphene grown by chemical vapour deposition(11) and at the LaAlO3-SrTiO3 interface(12), making the detection of Shubnikov-de Haas quantum oscillations possible. Top-gated field-effect transistors based on Bi2O2Se crystals down to the bilayer limit exhibit high Hall mobility values (up to 450 cm(2) V-1 s(-1)), large current on/off ratios (> 10(6)) and near-ideal subthreshold swing values (similar to 65 mV dec(-1)) at room temperature. Our results make Bi2O2Se a promising candidate for future high-speed and low-power electronic applications.

Details

show
hide
Language(s): eng - English
 Dates: 2017-06-012017-06-01
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: ISI: 000402769100009
DOI: 10.1038/NNANO.2017.43
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: Nature Nanotechnology
  Other : Nat. Nanotechnol.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: London : Nature Publishing Group
Pages: - Volume / Issue: 12 (6) Sequence Number: - Start / End Page: 530 - 535 Identifier: ISSN: 1748-3387
CoNE: /journals/resource/1000000000239770