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  High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se

Wu, J., Yuan, H., Meng, M., Chen, C., Sun, Y., Chen, Z., et al. (2017). High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se. Nature Nanotechnology, 12(6), 530-535. doi:10.1038/NNANO.2017.43.

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Wu, Jinxiong1, Autor
Yuan, Hongtao1, Autor
Meng, Mengmeng1, Autor
Chen, Cheng1, Autor
Sun, Yan2, Autor           
Chen, Zhuoyu1, Autor
Dang, Wenhui1, Autor
Tan, Congwei1, Autor
Liu, Yujing1, Autor
Yin, Jianbo1, Autor
Zhou, Yubing1, Autor
Huang, Shaoyun1, Autor
Xu, H. Q.1, Autor
Cui, Yi1, Autor
Hwang, Harold Y.1, Autor
Liu, Zhongfan1, Autor
Chen, Yulin1, Autor
Yan, Binghai3, Autor           
Peng, Hailin1, Autor
Affiliations:
1External Organizations, ou_persistent22              
2Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
3Binghai Yan, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863427              

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 Zusammenfassung: High-mobility semiconducting ultrathin films form the basis of modern electronics, and may lead to the scalable fabrication of highly performing devices. Because the ultrathin limit cannot be reached for traditional semiconductors, identifying new two-dimensional materials with both high carrier mobility and a large electronic bandgap is a pivotal goal of fundamental research(1-9). However, air-stable ultrathin semiconducting materials with superior performances remain elusive at present(10). Here, we report ultrathin films of non-encapsulated layered Bi2O2Se, grown by chemical vapour deposition, which demonstrate excellent air stability and high-mobility semiconducting behaviour. We observe bandgap values of similar to 0.8 eV, which are strongly dependent on the film thickness due to quantum-confinement effects. An ultrahigh Hall mobility value of > 20,000 cm(2) V-1 s(-1) is measured in as-grown Bi2O2Se nanoflakes at low temperatures. This value is comparable to what is observed in graphene grown by chemical vapour deposition(11) and at the LaAlO3-SrTiO3 interface(12), making the detection of Shubnikov-de Haas quantum oscillations possible. Top-gated field-effect transistors based on Bi2O2Se crystals down to the bilayer limit exhibit high Hall mobility values (up to 450 cm(2) V-1 s(-1)), large current on/off ratios (> 10(6)) and near-ideal subthreshold swing values (similar to 65 mV dec(-1)) at room temperature. Our results make Bi2O2Se a promising candidate for future high-speed and low-power electronic applications.

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Sprache(n): eng - English
 Datum: 2017-06-012017-06-01
 Publikationsstatus: Erschienen
 Seiten: -
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: ISI: 000402769100009
DOI: 10.1038/NNANO.2017.43
 Art des Abschluß: -

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Titel: Nature Nanotechnology
  Andere : Nat. Nanotechnol.
Genre der Quelle: Zeitschrift
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Ort, Verlag, Ausgabe: London : Nature Publishing Group
Seiten: - Band / Heft: 12 (6) Artikelnummer: - Start- / Endseite: 530 - 535 Identifikator: ISSN: 1748-3387
CoNE: https://pure.mpg.de/cone/journals/resource/1000000000239770