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  Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes

Ghittorelli, M., Lenz, T., Sharifi Dehsari, H., Zhao, D., Asadi, K., Blom, P. W. M., et al. (2017). Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes. Nature Communications, 8: 15841. doi:10.1038/ncomms15841.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-002D-7F85-4 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002D-7F86-2
Genre: Journal Article

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 Creators:
Ghittorelli, M., Author
Lenz, Thomas1, Author              
Sharifi Dehsari, Hamed2, Author              
Zhao, Dong1, Author              
Asadi, Kamal2, Author              
Blom, Paul W. M.1, Author              
Kovacs-Vajna, Z. M., Author
de Leeuw, Dago M.1, Author              
Torricelli, F., Author
Affiliations:
1Dept. Blom: Molecular Electronics, MPI for Polymer Research, Max Planck Society, ou_1800284              
2Humboldt Research Group Asadi: Organic/Inorganic Hybrids, MPI for Polymer Research, Max Planck Society, ou_2243638              

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Language(s): eng - English
 Dates: 2017
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1038/ncomms15841
 Degree: -

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Title: Nature Communications
  Abbreviation : Nat. Commun.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: London : Nature Publishing Group
Pages: - Volume / Issue: 8 Sequence Number: 15841 Start / End Page: - Identifier: ISSN: 2041-1723
CoNE: https://pure.mpg.de/cone/journals/resource/2041-1723