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  Effect of lattice mismatch on the magnetic properties of nanometer-thick La0.9Ba0.1MnO3(LBM) films and LBM/BaTiO3/LBM heterostructures

Vaghefia, P. M., Baghizadeh, A., Willinger, M. G., Lourenço, A., & Amaral, V. (2017). Effect of lattice mismatch on the magnetic properties of nanometer-thick La0.9Ba0.1MnO3(LBM) films and LBM/BaTiO3/LBM heterostructures. Applied Surface Science, 425, 988-995. doi:10.1016/j.apsusc.2017.06.252.

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Vaghefia, P. Mirzadeh1, Author
Baghizadeh, A.2, Author
Willinger, Marc Georg3, Author           
Lourenço, A.A.C.S. 1, Author
Amaral, V.S.1, Author
Affiliations:
1Department of Physics and CICECO, University of Aveiro, 3810-193 Aveiro, Portugal, ou_persistent22              
2Department of Materials and Ceramics Engineering and CICECO, University of Aveiro, 3810-193 Aveiro, Portugal, ou_persistent22              
3Inorganic Chemistry, Fritz Haber Institute, Max Planck Society, ou_24023              

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 Abstract: Oxide multiferroic thin films and heterostructures offer a wide range of properties originated from intrin-sic coupling between lattice strain and nanoscale magnetic/electronic ordering. La0.9Ba0.1MnO3(LBM) thin-films and LBM/BaTiO3/LBM (LBMBT) heterostructures were grown on single crystalline [100] siliconand [0001] Al2O3 using RF magnetron sputtering to study the effect of crystallinity and induced latticemismatch in the film on magnetic properties of deposited films and heterostructures. The thicknesses ofthe films on Al2O3 and Si are 70 and 145 nm, respectively, and for heterostructures are 40/30/40 nm onboth substrates. The microstructure of the films, state of strain and growth orientations was studied by XRD and microscopy techniques. Interplay of microstructure, strain and magnetic properties is furtherinvestigated. It is known that the crystal structure of substrates and imposed tensile strain affect thephysical properties; i.e. magnetic behavior of the film. The thin layer grown on Al2O3 substrate showsout-of-plane compressive strain, while Si substrate induces tensile strain on the deposited film. The mag-netic transition temperatures (Tc) of the LBM film on the Si and Al2O3 substrates are found to be 195 Kand 203 K, respectively, slightly higher than the bulk form, 185 K. The LBMBT heterostructure on Si sub-strate shows drastic decrease in magnetization due to produced defects created by diffusion of Ti ionsinto magnetic layer. Meanwhile, the Tc in LBMBTsincreases in respect to other studied single layers andheterostructure, because of higher tensile strain induced at the interfaces.

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Language(s): eng - English
 Dates: 2017-06-132017-03-282017-06-242017-07-042017-12-15
 Publication Status: Issued
 Pages: 8
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1016/j.apsusc.2017.06.252
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Title: Applied Surface Science
Source Genre: Journal
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Publ. Info: Amsterdam : Elsevier B.V.
Pages: 8 Volume / Issue: 425 Sequence Number: - Start / End Page: 988 - 995 Identifier: ISSN: 0169-4332
CoNE: https://pure.mpg.de/cone/journals/resource/954928576736