Ab Initio Modelling of Charge Carriers and Defects in the Bulk and at Surfaces 
of Doped MgO: Polarons, Charge Compensation, and Activation of Small Molecules

Levchenko, Sergey V.

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Ab Initio Modelling of Charge Carriers and Defects in the Bulk and at Surfaces of Doped MgO: Polarons, Charge Compensation, and Activation of Small Molecules

Levchenko, S. V. (2016). Ab Initio Modelling of Charge Carriers and Defects in the Bulk and at Surfaces of Doped MgO: Polarons, Charge Compensation, and Activation of Small Molecules. Talk presented at FHI-Workshop on Current Research Topics at the FHI. Potsdam, Germany. 2016-05-26 - 2016-05-27.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-002D-CE78-D Version Permalink: https://hdl.handle.net/11858/00-001M-0000-002D-CE79-B

Genre: Talk

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Creators:
Levchenko, Sergey V.¹, Author

Affiliations:
1Theory, Fritz Haber Institute, Max Planck Society, ou_634547

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Title: FHI-Workshop on Current Research Topics at the FHI

Place of Event: Potsdam, Germany

Start-/End Date: 2016-05-26 - 2016-05-27

Invited: Yes

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