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  Enhancing Thermoelectric Performance of TiNiSn Half-Heusler Compounds via Modulation Doping

Berry, T., Fu, C., Auffermann, G., Fecher, G. H., Schnelle, W., Serrano-Sanchez, F., et al. (2017). Enhancing Thermoelectric Performance of TiNiSn Half-Heusler Compounds via Modulation Doping. Chemistry of Materials, 29(16), 7042-7048. doi:10.1021/acs.chemmater.7b02685.

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Datensatz-Permalink: http://hdl.handle.net/11858/00-001M-0000-002D-F1FC-3 Versions-Permalink: http://hdl.handle.net/11858/00-001M-0000-002D-F21A-2
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 Urheber:
Berry, Tanya1, Autor              
Fu, Chenguang1, Autor              
Auffermann, Gudrun2, Autor              
Fecher, Gerhard H.3, Autor              
Schnelle, Walter4, Autor              
Serrano-Sanchez, Federico1, Autor              
Yue, Yuan5, Autor
Liang, Hong5, Autor
Felser, Claudia6, Autor              
Affiliations:
1Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
2Gudrun Auffermann, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863432              
3Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863431              
4Walter Schnelle, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863441              
5External Organizations, ou_persistent22              
6Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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 Zusammenfassung: MNiSn (M = Ti, Zr, and Hf) half-Heusler (HH) compounds are widely studied n-type thermoelectric (TE) materials for power generation. Most studies focus on Zr- and Hf-based compounds due to their high thermoelectric performance. However, these kinds of compositions are not cost-effective. Herein, the least expensive alloy in this half-Heusler family-TiNiSn-is investigated. Modulation doping of half-metallic MnNiSb in the TiNiSn system is realized by using spark plasma sintering. It is found that MnNiSb dissolves into the TiNiSn matrix and forms a heavily doped Ti1-xMnxNiSn1-xSbx phase, which leads to largely enhanced carrier concentration and also slight increase of carrier mobility. As a result, the electrical conductivity and power factor of the modulation doped compounds are greatly improved. A maximum power factor of 45 X 10(-4) W K-2 m(-1) is obtained at 750 K for the modulation doping system (TiNiSn)(1-x) + (MnNiSb)(x) with x = 0.05, which is one of the highest reported values in literature for TiNiSn systems. Furthermore, the lattice thermal conductivity is also suppressed due to the enhanced phonon scattering. Beneficial from the improved power factor and suppressed lattice thermal conductivity, a peak zT of 0.63 is obtained at 823 K for x = 0.05, which is an similar to 70% increase compared to the peak zT of TiNiSn. These results highlight the potential application of inexpensive TiNiSn-based TE materials and the effectiveness of modulation doping in enhancing the TE performance of HH compounds.

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Sprache(n): eng - Englisch
 Datum: 2017-07-312017-07-31
 Publikationsstatus: Im Druck publiziert
 Seiten: -
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: ISI: 000408519800052
DOI: 10.1021/acs.chemmater.7b02685
 Art des Abschluß: -

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Titel: Chemistry of Materials
  Kurztitel : Chem. Mater.
Genre der Quelle: Zeitschrift
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Affiliations:
Ort, Verlag, Ausgabe: Washington, D.C. : American Chemical Society
Seiten: - Band / Heft: 29 (16) Artikelnummer: - Start- / Endseite: 7042 - 7048 Identifikator: ISSN: 0897-4756
CoNE: /journals/resource/954925561571