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  Improved thermoelectric properties of TiNiSn through enhancing strain field fluctuation

Lkhagvasuren, E., Fu, C., Fecher, G. H., Auffermann, G., Kreiner, G., Schnelle, W., et al. (2017). Improved thermoelectric properties of TiNiSn through enhancing strain field fluctuation. Journal of Physics D: Applied Physics, 50(42): 425502, pp. 1-6. doi:10.1088/1361-6463/aa85bb.

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Lkhagvasuren, Enkhtaivan1, Autor           
Fu, Chenguang1, Autor           
Fecher, Gerhard H.2, Autor           
Auffermann, Gudrun3, Autor           
Kreiner, Guido4, Autor           
Schnelle, Walter5, Autor           
Felser, Claudia6, Autor           
Affiliations:
1Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
2Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863431              
3Gudrun Auffermann, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863432              
4Guido Kreiner, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863433              
5Walter Schnelle, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863441              
6Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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 Zusammenfassung: MNiSn (M = Hf, Zr, Ti) -based half Heusler compounds have attracted extensive attention as promising materials in thermoelectric power generation. In this work, the thermoelectric properties of the cheapest composition TiNiSn from this system are investigated. Isoelectronic substitutions of Si and Ge on Sn site are employed to reduce the lattice thermal conductivity. It is found that Si substitution leads to simultaneously enhanced mass and strain field fluctuations in TiNiSn, while the strain field fluctuation dominates the decrease of thermal conductivity in Ge substituted TiNiSn. A maximum ZT of 0.48 at 740 K is obtained in TiNiSn0.975Ge0.025, which is a 23% increase compared to TiNiSn. This result highlights the role of strain field fluctuation in suppressing lattice thermal conductivity and improving the thermoelectric performance of half-Heusler compounds.

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Sprache(n): eng - English
 Datum: 2017-09-252017-09-25
 Publikationsstatus: Erschienen
 Seiten: -
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: ISI: 000411701700001
DOI: 10.1088/1361-6463/aa85bb
 Art des Abschluß: -

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Titel: Journal of Physics D: Applied Physics
  Kurztitel : J. Phys. D: Appl. Phys.
Genre der Quelle: Zeitschrift
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Ort, Verlag, Ausgabe: Bristol : IOP Publishing
Seiten: - Band / Heft: 50 (42) Artikelnummer: 425502 Start- / Endseite: 1 - 6 Identifikator: ISSN: 0022-3727
CoNE: https://pure.mpg.de/cone/journals/resource/0022-3727