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  Improved thermoelectric properties of TiNiSn through enhancing strain field fluctuation

Lkhagvasuren, E., Fu, C., Fecher, G. H., Auffermann, G., Kreiner, G., Schnelle, W., et al. (2017). Improved thermoelectric properties of TiNiSn through enhancing strain field fluctuation. Journal of Physics D: Applied Physics, 50(42): 425502, pp. 1-6. doi:10.1088/1361-6463/aa85bb.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-002E-06FF-C Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002E-0701-D
Genre: Journal Article

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 Creators:
Lkhagvasuren, Enkhtaivan1, Author              
Fu, Chenguang1, Author              
Fecher, Gerhard H.2, Author              
Auffermann, Gudrun3, Author              
Kreiner, Guido4, Author              
Schnelle, Walter5, Author              
Felser, Claudia6, Author              
Affiliations:
1Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
2Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863431              
3Gudrun Auffermann, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863432              
4Guido Kreiner, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863433              
5Walter Schnelle, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863441              
6Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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 Abstract: MNiSn (M = Hf, Zr, Ti) -based half Heusler compounds have attracted extensive attention as promising materials in thermoelectric power generation. In this work, the thermoelectric properties of the cheapest composition TiNiSn from this system are investigated. Isoelectronic substitutions of Si and Ge on Sn site are employed to reduce the lattice thermal conductivity. It is found that Si substitution leads to simultaneously enhanced mass and strain field fluctuations in TiNiSn, while the strain field fluctuation dominates the decrease of thermal conductivity in Ge substituted TiNiSn. A maximum ZT of 0.48 at 740 K is obtained in TiNiSn0.975Ge0.025, which is a 23% increase compared to TiNiSn. This result highlights the role of strain field fluctuation in suppressing lattice thermal conductivity and improving the thermoelectric performance of half-Heusler compounds.

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Language(s): eng - English
 Dates: 2017-09-252017-09-25
 Publication Status: Published in print
 Pages: -
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 Table of Contents: -
 Rev. Method: -
 Identifiers: ISI: 000411701700001
DOI: 10.1088/1361-6463/aa85bb
 Degree: -

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Title: Journal of Physics D: Applied Physics
  Abbreviation : J. Phys. D: Appl. Phys.
Source Genre: Journal
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Publ. Info: Bristol : IOP Publishing
Pages: - Volume / Issue: 50 (42) Sequence Number: 425502 Start / End Page: 1 - 6 Identifier: ISSN: 0022-3727
CoNE: /journals/resource/0022-3727