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  Spectroscopic evidence for the gapless electronic structure in bulk ZrTe5

Shen, L., Wang, M. X., Sun, S. C., Jiang, J., Xu, X., Zhang, T., et al. (2017). Spectroscopic evidence for the gapless electronic structure in bulk ZrTe5. Journal of Electron Spectroscopy and Related Phenomena, 219, 45-52. doi:10.1016/j.elspec.2016.10.007.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-002E-06BB-4 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002E-06BD-F
Genre: Journal Article

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 Creators:
Shen, L.1, Author
Wang, M. X.1, Author
Sun, S. C.1, Author
Jiang, J.1, Author
Xu, X.1, Author
Zhang, T.1, Author
Zhang, Q. H.1, Author
Lv, Y. Y.1, Author
Yao, S. H.1, Author
Chen, Y. B.1, Author
Lu, M. H.1, Author
Chen, Y. F.1, Author
Felser, C.2, Author              
Yan, B. H.3, Author              
Liu, Z. K.1, Author
Yang, L. X.1, Author
Chen, Y. L.1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              
3Binghai Yan, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863427              

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 Abstract: Recently, transition metal pentatellurides MTes (M = Zr, Hf) have inspired intensive research effort. Being predicted to be quantum spin Hall insulators (QSHI) with the bulk gap up to hundreds of meVs, it could lead to promising applications at unprecedented high temperature compared with previously discovered QSHI (e.g. HgTe/CdTe or InAsiGaSb quantum wells). However, the experimental works soon followed illustrated considerable discrepancies regarding to whether MTe5 compounds possess a full bulk gap, making their topological nature (topological insulators or Dirac semimetals) illusive. In this work, combining investigations of angle -resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM), we systematically studied the electronic properties of ZrTe5. In intrinsic samples, we observed little evidence for the existence of topological surface states or large bulk gap. With bulk and surface doping to adjust the position of the Fermi-level, ARPES spectra indicate gapless and highly linear dispersions at the valance band top, in consistence with the STM measurements that show a V-shaped total density of states near the Fermi-level (i.e. suggesting a gapless nature of the electronic structure of ZrTe5). Moreover, near the terrace edge on the surface, we observed non-zero DOS, indicating the existence of edge states. (C) 2016 Elsevier B.V. All rights reserved.

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Language(s): eng - English
 Dates: 2017-10-182017-10-18
 Publication Status: Published in print
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Title: Journal of Electron Spectroscopy and Related Phenomena
  Abbreviation : J. Electron Spectrosc. Relat. Phenom.
Source Genre: Journal
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Publ. Info: Amsterdam : Elsevier B.V.
Pages: - Volume / Issue: 219 Sequence Number: - Start / End Page: 45 - 52 Identifier: ISSN: 0368-2048
CoNE: /journals/resource/954925524767