Stress originating from nanovoids in hydrogenated amorphous semiconductors

Wang, Zumin; Flötotto, David; Mittemeijer, Eric Jan

doi:10.1063/1.4977853

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Stress originating from nanovoids in hydrogenated amorphous semiconductors

Wang, Z., Flötotto, D., & Mittemeijer, E. J. (2017). Stress originating from nanovoids in hydrogenated amorphous semiconductors. Journal of Applied Physics, 121(9): 095307. doi:10.1063/1.4977853.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-002E-08D3-B Version Permalink: https://hdl.handle.net/21.11116/0000-0003-B49A-4

Genre: Journal Article

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Creators:
Wang, Zumin^{1, 2}, Author
Flötotto, David^{2, 3}, Author
Mittemeijer, Eric Jan^{2, 4}, Author

Affiliations:
1School of Materials Science and Engineering, Tianjin University , 300350 Tianjin, China, ou_persistent22
2Emeriti and Others, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497650
3Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801-2902, USA, ou_persistent22
4Institute for Materials Science, University of Stuttgart, Heisenbergstrasse 3, D-70569 Stuttgart, Germany, ou_persistent22

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Free keywords: Emeriti and Others

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Language(s): eng - English

Dates: Published Online: 2017-03-06Date issued: 2017

Publication Status: Issued

Pages: 6

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Identifiers: DOI: 10.1063/1.4977853

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Title: Journal of Applied Physics

Abbreviation : J. Appl. Phys.

Source Genre: Journal

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Publ. Info: New York, NY : AIP Publishing

Pages: - Volume / Issue: 121 (9) Sequence Number: 095307 Start / End Page: - Identifier: ISSN: 0021-8979
CoNE: https://pure.mpg.de/cone/journals/resource/991042723401880