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  LOW temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition

O’Donoghue, R., Rechmann, J., Aghaee, M., Rogalla, D., Becker, H.-W., Creatore, M., et al. (2017). LOW temperature growth of gallium oxide thin films via plasma enhanced atomic layer deposition. Dalton Transactions, 46, 16551-16561. doi:10.1039/c7dt03427j.

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 Creators:
O’Donoghue, Richard1, Author           
Rechmann, Julian2, Author           
Aghaee, Morteza3, Author           
Rogalla, Detlef4, Author           
Becker, Hans-Werner4, Author           
Creatore, Mariadriana3, Author           
Wieck, Andreas Dirk5, Author           
Devi, Anjana6, Author           
Affiliations:
1Inorganic Materials Chemistry, Faculty of Chemistry and Biochemistry, Ruhr-University Bochum, 44801 Bochum, Germany, ou_persistent22              
2Interface Spectroscopy, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863358              
3Eindhoven University of Technology, 5612 AZ Eindhoven, The Netherlands, persistent22              
4RUBION, Ruhr University Bochum, 44801 Bochum, Germany, ou_persistent22              
5Chair for Applied Solid State Physics, Ruhr-Universität Bochum, 44801 Bochum, Germany, ou_persistent22              
6Inorganic Materials Chemistry, Ruhr-University Bochum, Universitätsstr. 150, Germany, ou_persistent22              

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Language(s): eng - English
 Dates: 2017-11-112017-11-21
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1039/c7dt03427j
 Degree: -

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Title: Dalton Transactions
  Abbreviation : Dalton Trans.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Cambridge, UK : Royal Society of Chemistry
Pages: - Volume / Issue: 46 Sequence Number: - Start / End Page: 16551 - 16561 Identifier: ISSN: 1477-9226
CoNE: https://pure.mpg.de/cone/journals/resource/954925269323