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  Characterization and optimization of a thin direct electron detector for fast imaging applications

Dourki, I., Westermeier, F., Schopper, F., Richter, R., Andricek, L., Ninkovic, J., et al. (2017). Characterization and optimization of a thin direct electron detector for fast imaging applications. Journal of Instrumentation, 12: C03047. doi:10.1088/1748-0221/12/03/C03047.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-002E-96AD-B Version Permalink: http://hdl.handle.net/21.11116/0000-0001-EAE8-2
Genre: Journal Article

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Dourki_2017_J._Inst._12_C03047.pdf (Publisher version), 3MB
 
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 Creators:
Dourki, Ibrahym1, Author              
Westermeier, Fabian1, Author              
Schopper, F.2, Author
Richter, R.H.2, Author
Andricek, L.2, Author
Ninkovic, J.2, Author
Treis, J.2, Author
Koffmane, C.2, Author
Wassatsch, A.2, Author
Peric, I.3, Author
Epp, S. W.1, Author              
Miller, R. J. Dwayne1, 4, Author              
Affiliations:
1Miller Group, Atomically Resolved Dynamics Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_1938288              
2Halbleiterlabor der Max-Planck-Gesellschaft, Otto-Hahn-Ring 6, 81739 München, Germany, ou_persistent22              
3Karlsruhe Institute of Technology (KIT), Institute for Data Processing and Electronics (IPE), 76021 Karlsruhe, Germany, ou_persistent22              
4Departments of Chemistry and Physics, University of Toronto, 80 St. George Street, Toronto M5S 1H6, Canada, ou_persistent22              

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 Abstract: Direct electron detectors are increasingly used to explore the dynamics of macromolecules in real space and real time using transmission electron microscopy. The purpose of this work is to optimize the most suitable detector configuration of a thin silicon detector by Monte Carlo Simulations. Several simulations were performed to achieve an advanced detector geometry that reduces significantly the background signal due to backscattered electrons resulting in an enhanced imaging performance of the detector. Utilizing DEPFET (DEpleted P-channel Field Effect Transistor) technology and the novel ideas for the optimized detector geometry, a unique direct hit electron detector is currently being produced.

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Language(s): eng - English
 Dates: 2016-09-302017-02-142017-03-13
 Publication Status: Published online
 Pages: -
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 Rev. Method: Peer
 Identifiers: DOI: 10.1088/1748-0221/12/03/C03047
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Title: Journal of Instrumentation
  Other : JINST
Source Genre: Journal
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Publ. Info: Bristol : IOP Publishing
Pages: - Volume / Issue: 12 Sequence Number: C03047 Start / End Page: - Identifier: ISSN: 1748-0221
CoNE: https://pure.mpg.de/cone/journals/resource/1000000000221510