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  Understanding GaN/InGaN core-shell growth towards high quality factor whispering gallery modes from non-polar InGaN quantum wells on GaN rods

Tessarek, C., Rechberger, S., Dieker, C., Heilmann, M., Spiecker, E., & Christiansen, S. (2017). Understanding GaN/InGaN core-shell growth towards high quality factor whispering gallery modes from non-polar InGaN quantum wells on GaN rods. NANOTECHNOLOGY, 28(48): 485601. doi:10.1088/1361-6528/aa9050.

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 Creators:
Tessarek, C.1, 2, Author           
Rechberger, S.3, Author
Dieker, C.3, Author
Heilmann, M.1, Author           
Spiecker, E.3, Author           
Christiansen, S.4, 5, 6, Author           
Affiliations:
1Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364725              
2University of Bremen, Inst Solid State Phys, Otto Hahn Allee 1, D-28359 Bremen, Germany, ou_persistent22              
3Center for Nanoanalysis and Electron Microscopy, Friedrich-Alexander Universität Erlangen-Nürnberg, Cauerstr. 6, Erlangen, Germany, ou_persistent22              
4Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364716              
5Helmoltz-Center Berlin for Materials & Energy (HZB), Hahn Meitner Pl 1, D-14109 Berlin, Germany, ou_persistent22              
6Free University of Berlin, Phys Dept, Arnimallee 14, D-14195 Berlin, Germany, ou_persistent22              

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Free keywords: VAPOR-PHASE EPITAXY; OPTICAL MICROCAVITIES; THERMODYNAMICS; NANORODS; SILICONScience & Technology - Other Topics; Materials Science; Physics; GaN; InGaN; SiN; rods; core-shell; quantum wells; whispering gallery modes;
 Abstract: GaN microrods are used as a basis for subsequent InGaN quantum well (QW) and quantum dot deposition by metal-organic vapor phase epitaxy. The coverage of the shell along the sidewall of rods is dependent on the rod growth time and a complete coverage is obtained for shorter rod growth times. Transmission electron microscopy measurements are performed to reveal the structural properties of the InGaN layer on the sidewall facet and on the top facet. The presence of layers in the microrod and on the microrod surface will be discussed with respect to GaN and InGaN growth. A detailed model will be presented explaining the formation of multiple SiN layers and the partial and full coverage of the shell around the core. Cathodoluminescence measurements are performed to analyze the InGaN emission properties along the microrod and to study the microresonator properties of such hexagonal core-shell structures. High quality factor whispering gallery modes with Q similar to 1200 are reported for the first time in a GaN microrod/InGaN non-polar QW core-shell geometry. The GaN/InGaN core-shell microrods are expected to be promising building blocks for low-threshold laser diodes and ultra-sensitive optical sensors.

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Language(s): eng - English
 Dates: 2017
 Publication Status: Published online
 Pages: 9
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: ISI: 000414553700001
DOI: 10.1088/1361-6528/aa9050
 Degree: -

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Title: NANOTECHNOLOGY
Source Genre: Journal
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Publ. Info: TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND : IOP PUBLISHING LTD
Pages: - Volume / Issue: 28 (48) Sequence Number: 485601 Start / End Page: - Identifier: ISSN: 0957-4484