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  Effect of ammonification temperature on the formation of coaxial GaN/Ga2O3 nanowires

Kumar, M., Sarau, G., Heilmann, M., Christiansen, S., Kumar, V., & Singh, R. (2017). Effect of ammonification temperature on the formation of coaxial GaN/Ga2O3 nanowires. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 50(3): 035302. doi:10.1088/1361-6463/50/3/035302.

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Datensatz-Permalink: https://hdl.handle.net/21.11116/0000-0000-85AE-6 Versions-Permalink: https://hdl.handle.net/21.11116/0000-0000-85AF-5
Genre: Zeitschriftenartikel

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 Urheber:
Kumar, Mukesh1, Autor
Sarau, George2, 3, Autor           
Heilmann, Martin2, 4, Autor           
Christiansen, Silke3, 5, Autor           
Kumar, Vikram1, Autor
Singh, R.1, Autor
Affiliations:
1external, ou_persistent22              
2Micro- & Nanostructuring, Technology Development and Service Units, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364725              
3Helmoltz-Center Berlin for Materials & Energy (HZB), Hahn Meitner Pl 1, D-14109 Berlin, Germany, ou_persistent22              
4Paul Drude Institute for Solid State Electronics, Hausvogteipl 5-7, D-10117 Berlin, Germany , ou_persistent22              
5Christiansen Research Group, Research Groups, Max Planck Institute for the Science of Light, Max Planck Society, ou_2364716              

Inhalt

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Schlagwörter: GALLIUM NITRIDE; GAN; BETA-GA2O3; SCATTERING; VACANCIES; NANORODS; DEVICES; GROWTH; LIGHTPhysics; coaxial; nanowire; gallium nitride; gallium oxide;
 Zusammenfassung: The effect of ammonification temperature on the formation of coaxial GaN/Ga2O3 nanowires from beta-Ga2O3 nanowires is reported in this work. High quality wurtzite GaN material showing a single c-plane phase is achieved from beta-Ga2O3 nanowires having monoclinic crystal structure at a high ammonification temperature of 1050 degrees C. Lower ammonification temperatures such as 900 degrees C are also adequate for achieving coaxial GaN/Ga2O3 nanowire heterostructures, and the degree of GaN phase can be adjusted by varying the ammonification temperature. The crystalline quality of GaN/Ga2O3 nanowires improves with increasing the ammonification temperature. Resonant Raman spectra of GaN/Ga2O3 nanowires show Raman progression through multiple longitudinal-optical-phonon modes with overtones of up to second order. The development and improvement of the emission peak toward the near band edge of GaN at different ammonification temperatures were investigated using cathodoluminescence and photoluminescence characterization.

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Sprache(n): eng - English
 Datum: 2017
 Publikationsstatus: Online veröffentlicht
 Seiten: 9
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: ISI: 000415176300002
DOI: 10.1088/1361-6463/50/3/035302
 Art des Abschluß: -

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Titel: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Genre der Quelle: Zeitschrift
 Urheber:
Affiliations:
Ort, Verlag, Ausgabe: TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND : IOP PUBLISHING LTD
Seiten: - Band / Heft: 50 (3) Artikelnummer: 035302 Start- / Endseite: - Identifikator: ISSN: 0022-3727