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  Electron–phonon interaction in the 4/3-monolayer of Pb on Si(111): Theory versus He-atom scattering experiments

Sklyadneva, I. Y., Benedek, G., Heid, R., Echenique, P. M., Toennies, J. P., & Chulkov, E. V. (2018). Electron–phonon interaction in the 4/3-monolayer of Pb on Si(111): Theory versus He-atom scattering experiments. Journal of Physical Chemistry C, 122(50), 29039-29043. doi:10.1021/acs.jpcc.8b10081.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0000-291D-3 Version Permalink: http://hdl.handle.net/21.11116/0000-0003-C8C7-B
Genre: Journal Article

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 Creators:
Sklyadneva, I. Y., Author
Benedek, G., Author
Heid, R., Author
Echenique, P. M., Author
Toennies, Jan Peter1, Author              
Chulkov, E. V., Author
Affiliations:
1Emeritus Group Molecular Interactions, Max Planck Institute for Dynamics and Self-Organization, Max Planck Society, ou_2063297              

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 Abstract: The electron–phonon coupling parameter for a dense phase of a 4/3-monolayer of Pb on Si(111) is derived from the temperature dependence of He-atom scattering (HAS) reflectivity upon cooling from the high-temperature (1 × 1) to the low-temperature phase. The obtained value and the phonon dispersion curves of the Pb nanofilm measured with HAS are in excellent agreement with the first-principles calculations when the influence of the substrate and the interface on the interaction of electrons and phonons is taken into account. Consideration of this effect is obviously very important for such small thicknesses as a single Pb wetting layer. An overall strong coupling constant, λ = 0.84 ± 0.07, is found.

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Language(s): eng - English
 Dates: 2018-11-302018-12-20
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: Peer
 Identifiers: DOI: 10.1021/acs.jpcc.8b10081
 Degree: -

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Title: Journal of Physical Chemistry C
Source Genre: Journal
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Pages: - Volume / Issue: 122 (50) Sequence Number: - Start / End Page: 29039 - 29043 Identifier: ISSN: 1932-7447