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  Electronic properties of topological insulator candidate CaAgAs

Nayak, J., Kumar, N., Wu, S.-C., Shekhar, C., Fink, J., Rienks, E. D. L., et al. (2018). Electronic properties of topological insulator candidate CaAgAs. Journal of Physics: Condensed Matter, 30(4): 045501, pp. 1-5. doi:10.1088/1361-648X/aaa1cd.

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Item Permalink: http://hdl.handle.net/21.11116/0000-0000-2EE9-7 Version Permalink: http://hdl.handle.net/21.11116/0000-0000-2EEB-5
Genre: Journal Article

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 Creators:
Nayak, Jayita1, Author              
Kumar, Nitesh1, Author              
Wu, Shu-Chun1, Author              
Shekhar, Chandra2, Author              
Fink, Jörg1, Author              
Rienks, Emile D. L.3, Author
Fecher, Gerhard H.4, Author              
Sun, Yan1, Author              
Felser, Claudia5, Author              
Affiliations:
1Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
2Chandra Shekhar, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863428              
3External Organizations, ou_persistent22              
4Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863431              
5Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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 Abstract: The topological phases of matter provide the opportunity to observe many exotic properties, such as the existence of 2D topological surface states in the form of Dirac cones in topological insulators and chiral transport through the open Fermi arc in Weyl semimetals. However, these properties affect the transport characteristics and, therefore, may be useful for applications only if the topological phenomena occur near the Fermi level. CaAgAs is a promising candidate for which the ab initio calculations predict line-nodes at the Fermi energy. However, the compound transforms into a topological insulator on considering spin-orbit interaction. In this study, we investigated the electronic structure of CaAgAs with angle-resolved photoemission spectroscopy (ARPES), ab initio calculations, and transport measurements. The results from ARPES show that the bulk valence band crosses the Fermi energy at the G-point. The measured band dispersion matches the ab initio calculations closely when shifting the Fermi energy in the calculations by -0.5 eV. The ARPES results are in good agreement with transport measurements, which show abundant p-type carriers.

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Language(s): eng - English
 Dates: 2018-01-042018-01-04
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: DOI: 10.1088/1361-648X/aaa1cd
 Degree: -

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Title: Journal of Physics: Condensed Matter
Source Genre: Journal
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Publ. Info: Bristol : IOP Publishing
Pages: - Volume / Issue: 30 (4) Sequence Number: 045501 Start / End Page: 1 - 5 Identifier: ISSN: 0953-8984
CoNE: /journals/resource/954928562478