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  Raman spectroscopy and microscopy of electrochemically and chemically doped high-mobility semiconducting polymers

Francis, C., Fazzi, D., Paulus, F., Beck, S., Hillebrandt, S., Pucci, A., et al. (2017). Raman spectroscopy and microscopy of electrochemically and chemically doped high-mobility semiconducting polymers. Journal of Materials Chemistry C, 5(25), 6176-6184. doi:10.1039/c7tc01277b.

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 Creators:
Francis, C.1, 2, Author
Fazzi, Daniele3, Author              
Paulus, F.1, Author
Beck, S.4, 5, Author
Hillebrandt, S.4, 5, Author
Pucci, A.4, 5, Author
Zaumseil, J.1, Author
Affiliations:
1Universität Heidelberg, Institute for Physical Chemistry, D-69120 Heidelberg, Germany , ou_persistent22              
2University of York, York YO10 5DD, UK , ou_persistent22              
3Research Department Thiel, Max-Planck-Institut für Kohlenforschung, Max Planck Society, ou_1445590              
4InnovationLab, Heidelberg 69115, Germany, ou_persistent22              
5Universität Heidelberg, Kirchhoff Institute for Physics, Heidelberg 69120, Germany , ou_persistent22              

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 Abstract: The polaronic nature of two high-mobility hole-conducting polymers (PBTTT and DPPT-TT) is investigated by Raman spectroscopy and density functional theory (DFT) calculations. Chemical and electrochemical hole doping of these polymers leads to characteristic changes in the intensity ratios of the Raman active C[double bond, length as m-dash]C stretching modes but no significant frequency shifts. The data indicate a localization of positive polarons on the electron-rich thienothiophene cores that are present in both polymers. DFT calculations show that the Raman intensity ratio variations are most likely caused by the local electric field that originates from negatively charged dopant molecules or electrolyte anions and the positive polaron on the polymer chain. The characteristic changes in the Raman mode intensity ratios with the degree of doping enable in situ mapping of charge carrier concentration in the channel of electrolyte-gated polymer transistors with high spatial resolution.

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Language(s): eng - English
 Dates: 2017-03-252017-05-192017-05-222017-07-07
 Publication Status: Published in print
 Pages: 9
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1039/c7tc01277b
 Degree: -

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Title: Journal of Materials Chemistry C
  Other : Journal of Materials Chemistry C: Materials for Optical and Electronic Devices
  Abbreviation : J. Mater. Chem. C
Source Genre: Journal
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Publ. Info: London, UK : Royal Society of Chemistry
Pages: - Volume / Issue: 5 (25) Sequence Number: - Start / End Page: 6176 - 6184 Identifier: ISSN: 2050-7526
CoNE: https://pure.mpg.de/cone/journals/resource/2050-7526