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  Terahertz electrical writing speed in an antiferromagnetic memory

Olejník, K., Seifert, T., Kašpar, Z., Novák, V., Wadley, P., Campion, R. P., et al. (2018). Terahertz electrical writing speed in an antiferromagnetic memory. Science Advances, 4(3): 3566. doi:10.1126/sciadv.aar3566.

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Item Permalink: https://hdl.handle.net/21.11116/0000-0001-2660-8 Version Permalink: https://hdl.handle.net/21.11116/0000-000D-32EB-2
Genre: Journal Article

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 Creators:
Olejník, Kamil1, Author
Seifert, Tom2, Author           
Kašpar, Zdeněk1, 3, Author
Novák, Vít1, Author
Wadley, Peter4, Author
Campion, Richard P.4, Author
Baumgartner, Manuel5, Author
Gambardella, Pietro5, Author
Němec, Petr3, Author
Wunderlich, Joerg1, 6, Author
Sinova, Jairo1, 7, Author
Kužel, Petr8, Author
Müller, Melanie2, Author           
Kampfrath, Tobias2, 9, Author           
Jungwirth, Tomas1, 4, Author
Affiliations:
1Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 162 00 Praha 6, Czech Republic, ou_persistent22              
2Physical Chemistry, Fritz Haber Institute, Max Planck Society, ou_634546              
3Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16 Prague 2, Czech Republic, ou_persistent22              
4School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK, ou_persistent22              
5Department of Materials, ETH Zürich, Hönggerbergring 64, CH-8093 Zürich, Switzerland, ou_persistent22              
6Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE, UK, ou_persistent22              
7Institut für Physik, Johannes Gutenberg Universität Mainz, 55128 Mainz, Germany, ou_persistent22              
8Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 182 21 Praha 8, Czech Republic, ou_persistent22              
9Department of Physics, Freie Universität Berlin, Arnimallee 14, 14195 Berlin, Germany, ou_persistent22              

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 Abstract: The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic gigahertz threshold. Recently, realization of memory devices based on antiferromagnets, in which spin directions periodically alternate from one atomic lattice site to the next has moved research in an alternative direction. We experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to terahertz using an antiferromagnet. A current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the 12-order-of-magnitude range of writing speeds from hertz to terahertz. Our work opens the path toward the development of memory-logic technology reaching the elusive terahertz band.

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Language(s): eng - English
 Dates: 2017-10-302018-02-082018-03-23
 Publication Status: Published online
 Pages: 8
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1126/sciadv.aar3566
 Degree: -

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Project name : TERAMAG - Ultrafast spin transport and magnetic order controlled by terahertz electromagnetic pulses
Grant ID : 681917
Funding program : Horizon 2020 (H2020)
Funding organization : European Commission (EC)
Project name : ASPIN - Antiferromagntic spintronics
Grant ID : 766566
Funding program : Horizon 2020 (H2020)
Funding organization : European Commission (EC)

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Title: Science Advances
  Other : Sci. Adv.
Source Genre: Journal
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Publ. Info: Washington : AAAS
Pages: 8 Volume / Issue: 4 (3) Sequence Number: 3566 Start / End Page: - Identifier: ISSN: 2375-2548
CoNE: https://pure.mpg.de/cone/journals/resource/2375-2548