Origin of Temperature-Dependent Ferroelectricity in Si-Doped HfO2

Park, Min Hyuk; Chung, Ching-Chang; Schenk, Tony; Richter, Claudia; Hoffmann, Michael; Wirth, Steffen; Jones, Jacob L.; Mikolajick, Thomas; Schroeder, Uwe

doi:10.1002/aelm.201700489

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Origin of Temperature-Dependent Ferroelectricity in Si-Doped HfO₂

Park, M. H., Chung, C.-C., Schenk, T., Richter, C., Hoffmann, M., Wirth, S., et al. (2018). Origin of Temperature-Dependent Ferroelectricity in Si-Doped HfO₂. Advanced Electronic Materials, 4(4): 1700489, pp. 1-8. doi:10.1002/aelm.201700489.

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Item Permalink: https://hdl.handle.net/21.11116/0000-0001-45DE-8 Version Permalink: https://hdl.handle.net/21.11116/0000-0001-45E1-3

Genre: Journal Article

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Creators:
Park, Min Hyuk¹, Author
Chung, Ching-Chang¹, Author
Schenk, Tony¹, Author
Richter, Claudia¹, Author
Hoffmann, Michael¹, Author
Wirth, Steffen², Author
Jones, Jacob L.¹, Author
Mikolajick, Thomas¹, Author
Schroeder, Uwe¹, Author

Affiliations:
1External Organizations, ou_persistent22
2Steffen Wirth, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863460

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Language(s): eng - English

Dates: Published Online: 2018-03-24Date issued: 2018-03-24

Publication Status: Issued

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Identifiers: ISI: 000430115000005
DOI: 10.1002/aelm.201700489

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Title: Advanced Electronic Materials

Abbreviation : Adv. Electron. Mater.

Source Genre: Journal

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Publ. Info: Weinheim : Wiley-VCH

Pages: - Volume / Issue: 4 (4) Sequence Number: 1700489 Start / End Page: 1 - 8 Identifier: ISSN: 2199-160X
CoNE: https://pure.mpg.de/cone/journals/resource/2199-160X