English
 
User Manual Privacy Policy Disclaimer Contact us
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
  Origin of Temperature-Dependent Ferroelectricity in Si-Doped HfO2

Park, M. H., Chung, C.-C., Schenk, T., Richter, C., Hoffmann, M., Wirth, S., et al. (2018). Origin of Temperature-Dependent Ferroelectricity in Si-Doped HfO2. Advanced Electronic Materials, 4(4): 1700489, pp. 1-8. doi:10.1002/aelm.201700489.

Item is

Basic

show hide
Item Permalink: http://hdl.handle.net/21.11116/0000-0001-45DE-8 Version Permalink: http://hdl.handle.net/21.11116/0000-0001-45E1-3
Genre: Journal Article

Files

show Files

Locators

show

Creators

show
hide
 Creators:
Park, Min Hyuk1, Author
Chung, Ching-Chang1, Author
Schenk, Tony1, Author
Richter, Claudia1, Author
Hoffmann, Michael1, Author
Wirth, Steffen2, Author              
Jones, Jacob L.1, Author
Mikolajick, Thomas1, Author
Schroeder, Uwe1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Steffen Wirth, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863460              

Content

show

Details

show
hide
Language(s): eng - English
 Dates: 2018-03-242018-03-24
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Method: -
 Identifiers: ISI: 000430115000005
DOI: 10.1002/aelm.201700489
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: Advanced Electronic Materials
  Abbreviation : Adv. Electron. Mater.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Weinheim : Wiley-VCH
Pages: - Volume / Issue: 4 (4) Sequence Number: 1700489 Start / End Page: 1 - 8 Identifier: ISSN: 2199-160X
CoNE: /journals/resource/2199-160X